Kartikeya Mayaram

EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M88/71
November 1988

http://www2.eecs.berkeley.edu/Pubs/TechRpts/1988/ERL-88-71.pdf

CODECS is a mixed-level circuit and device simulator that provides a direct link between technology parameters and circuit performance. Detailed and accurate analyses of semiconductor circuits are possible by use of physical (numerical) models for critical devices. The numerical models are based upon solution of Poisson's equation and the current-continuity equations. Analytical models can be used for the noncritical devices.

The goal of this research has been to develop a general framework for mixed-level circuit and device simulation that supports a wide variety of analyses capabilities and numerical models. Emphasis has been on algorithms to couple the device simulator with the circuit simulator and an evaluation of the convergence properties of the coupled simulator. Different algorithms have been implemented and evaluated in CODECS.

Another aspect of this research has been to investigate critical applications of mixed-level circuit and device simulation. Typical examples include simulation of high-level injection effects in BiCMOS driver circuits, non-quasi-static MOS operation, switch-induced error in MOS switched-capacitor circuits, and inductive turn off of pin rectifiers. For these examples conventional circuit simulation with analytical models gives inaccurate results.

CODECS incorporates SPICE3 for the circuit-simulation capability and for analytical models. A new one- and two-dimensional device simulator has been developed. CODECS supports dc, transient, small-signal ac, and pole-zero analyses of circuits containing one- and two-dimensional numerical models for diodes and bipolar transistors and two-dimensional numerical models for MOSFETs. CODECS include physical effects such as bandgap narrowing, Shockley-Hall-Read and Auger recombinations, concentration and field-dependent dependent mobilities, concentration-dependent lifetimes, and avalanche generation.

Advisor: Donald O. Pederson

BibTeX citation:

@phdthesis{Mayaram:M88/71,
    Author = {Mayaram, Kartikeya},
    Title = {CODECS: A Mixed-Level Circuit and Device Simulator},
    School = {EECS Department, University of California, Berkeley},
    Year = {1988},
    Month = {Nov},
    URL = {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1988/1118.html},
    Number = {UCB/ERL M88/71},
    Abstract = {CODECS is a mixed-level circuit and device simulator that
provides a direct link between technology parameters and circuit
performance. Detailed and accurate analyses of semiconductor
circuits are possible by use of physical (numerical) models for
critical devices. The numerical models are based upon solution of
Poisson's equation and the current-continuity equations. Analytical
models can be used for the noncritical devices.

The goal of this research has been to develop a general framework
for mixed-level circuit and device simulation that supports a wide
variety of analyses capabilities and numerical models. Emphasis has
been on algorithms to couple the device simulator with the circuit
simulator and an evaluation of the convergence properties of the
coupled simulator. Different algorithms have been implemented and
evaluated in CODECS.

Another aspect of this research has been to investigate critical
applications of mixed-level circuit and device simulation. Typical
examples include simulation of high-level injection effects in BiCMOS
driver circuits, non-quasi-static MOS operation, switch-induced
error in MOS switched-capacitor circuits, and inductive turn off of
pin rectifiers. For these examples conventional circuit simulation
with analytical models gives inaccurate results.

CODECS incorporates SPICE3 for the circuit-simulation capability 
and for analytical models. A new one- and two-dimensional device
simulator has been developed.  CODECS supports dc, transient,
small-signal ac, and pole-zero analyses of circuits containing
one- and two-dimensional numerical models for diodes and bipolar
transistors and two-dimensional numerical models for MOSFETs.
CODECS include physical effects such as bandgap narrowing,
Shockley-Hall-Read and Auger recombinations, concentration and
field-dependent dependent mobilities, concentration-dependent
lifetimes, and avalanche generation.}
}

EndNote citation:

%0 Thesis
%A Mayaram, Kartikeya
%T CODECS: A Mixed-Level Circuit and Device Simulator
%I EECS Department, University of California, Berkeley
%D 1988
%@ UCB/ERL M88/71
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1988/1118.html
%F Mayaram:M88/71