Min Hee Cho and Changhwan Shin and Tsu-Jae King Liu

EECS Department, University of California, Berkeley

Technical Report No. UCB/EECS-2009-147

October 28, 2009

http://www2.eecs.berkeley.edu/Pubs/TechRpts/2009/EECS-2009-147.pdf

A convex channel surface with Si0.8Ge0.2 is proposed to enhance the retention time of a Z-RAM Generation 2 type of capacitorless DRAM cell. This structure provides a physical well together with an electrostatic barrier to more effectively store holes and thereby achieve larger sensing margin as well as retention time. The advantages of this new cell design as compared with the planar cell design are assessed via two-dimensional device simulations. The results indicate that the convex heterojunction channel design is very promising for future capacitorless DRAM.

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BibTeX citation:

@techreport{Cho:EECS-2009-147,
    Author= {Cho, Min Hee and Shin, Changhwan and King Liu, Tsu-Jae},
    Title= {Convex Channel Design for Improved Capacitorless DRAM Retention Time},
    Year= {2009},
    Month= {Oct},
    Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/2009/EECS-2009-147.html},
    Number= {UCB/EECS-2009-147},
    Abstract= {A convex channel surface with Si0.8Ge0.2 is proposed to enhance the retention time of a Z-RAM Generation 2 type of capacitorless DRAM cell. This structure provides a physical well together with an electrostatic barrier to more effectively store holes and thereby achieve larger sensing margin as well as retention time. The advantages of this new cell design as compared with the planar cell design are assessed via two-dimensional device simulations. The results indicate that the convex heterojunction channel design is very promising for future capacitorless DRAM.},
}

EndNote citation:

%0 Report
%A Cho, Min Hee 
%A Shin, Changhwan 
%A King Liu, Tsu-Jae 
%T Convex Channel Design for Improved Capacitorless DRAM Retention Time
%I EECS Department, University of California, Berkeley
%D 2009
%8 October 28
%@ UCB/EECS-2009-147
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/2009/EECS-2009-147.html
%F Cho:EECS-2009-147