Chih-Ming Lin

EECS Department, University of California, Berkeley

Technical Report No. UCB/EECS-2012-264

December 14, 2012

http://www2.eecs.berkeley.edu/Pubs/TechRpts/2012/EECS-2012-264.pdf

In this work, temperature compensation of AlN Lamb wave resonators (LWRs) using the lowest-order symmetric (S0) Lamb wave mode is theoretically and experimentally investigated. By adding a compensating layer of silicon dioxide (SiO2) with an appropriate thickness ratio to the aluminum nitride (AlN) thin film, the AlN/SiO2 LWR can achieve a low first-order TCF at room temperature. In addition, LWRs with an AlN layer as thin as 250 nm are proposed to realize the temperature compensation over a wide frequency range from 100 MHz to 1 GHz. Using a multilayer plate composed of 1-μm-thick AlN and 0.83-μm-thick SiO2, a temperature-compensated AlN/SiO2 LWR operating at a series resonance frequency of 711 MHz exhibits a zero first-order TCF and a small second-order TCF of -21.5 ppb/C^2 at its turnover temperature, 18.05 degree C. The temperature dependence of fractional frequency variation is less than 250 parts per million (ppm) over a wide temperature range from –55 to 125 degree C. The temperature-compensated AlN LWR is promising for future applications including thermally stable oscillators, filters, and sensors.

Advisors: Albert Pisano

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BibTeX citation:

@mastersthesis{Lin:EECS-2012-264,
    Author= {Lin, Chih-Ming},
    Title= {Temperature Compensation of Aluminum Nitride Lamb Wave Resonators Utilizing the Lowest-Order Symmetric Mode},
    School= {EECS Department, University of California, Berkeley},
    Year= {2012},
    Month= {Dec},
    Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/2012/EECS-2012-264.html},
    Number= {UCB/EECS-2012-264},
    Abstract= {In this work, temperature compensation of AlN Lamb wave resonators (LWRs) using the lowest-order symmetric (S0) Lamb wave mode is theoretically and experimentally investigated.  By adding a compensating layer of silicon dioxide (SiO2) with an appropriate thickness ratio to the aluminum nitride (AlN) thin film, the AlN/SiO2 LWR can achieve a low first-order TCF at room temperature.  In addition, LWRs with an AlN layer as thin as 250 nm are proposed to realize the temperature compensation over a wide frequency range from 100 MHz to 1 GHz.  Using a multilayer plate composed of 1-μm-thick AlN and 0.83-μm-thick SiO2, a temperature-compensated AlN/SiO2 LWR operating at a series resonance frequency of 711 MHz exhibits a zero first-order TCF and a small second-order TCF of -21.5 ppb/C^2 at its turnover temperature, 18.05 degree C.  The temperature dependence of fractional frequency variation is less than 250 parts per million (ppm) over a wide temperature range from –55 to 125 degree C.  The temperature-compensated AlN LWR is promising for future applications including thermally stable oscillators, filters, and sensors.},
}

EndNote citation:

%0 Thesis
%A Lin, Chih-Ming 
%T Temperature Compensation of Aluminum Nitride Lamb Wave Resonators Utilizing the Lowest-Order Symmetric Mode
%I EECS Department, University of California, Berkeley
%D 2012
%8 December 14
%@ UCB/EECS-2012-264
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/2012/EECS-2012-264.html
%F Lin:EECS-2012-264