Oxygen-Inserted-Channel MOSFET: Device Performance and Scalability Enhancement Study (OxyInsert)

Nuo Xu, Tsu-Jae King Liu, Nattapol Damrongplasit, Robert J. Mears1, Hideki Takeuchi2, Marek Hytha3, Xiangyang Huang4, Robert J. Stevenson5 and Agustin Yipton6

MEARS Technologies

Strain-induced MOSFET performance enhancement appears to be saturating with transistor scaling, due to reduction in embedded Source/Drain (S/D) stressor volume and increased process complexity. Thus, alternative approaches to sustain the historical pace of performance improvement are needed. “Oxygen-insertion” technology was proposed recently to boost carrier mobilities. Ab-initio simulations suggest that the inserted oxygen layers can separate carrier wavefunction distributions to reduce scattering rates, so that carrier mobility values are enhanced. In this work, the physical mechanisms and benefits of this technology are studied, and its applicability to thin-body MOSFETs (i.e. the FinFET and fully depleted SOI (FD-SOI) MOSFET) is studied for future CMOS technology nodes. Relevant publications [1-2]

Figure 1
Figure 1: Illustration of oxygen-insertion technique into MOSFET channels, and resulted electron wavefunction distributions.

N. Xu*, N. Damrongplasit, H. Takeuchi, R.J. Stephenson, N.W. Cody, A. Yipton, X. Huang, M. Hytha, R.J. Mears, T.-J. King Liu, “MOSFET Performance and Scalability Enhancement by Insertion of Oxygen Layers,” to be presented at IEEE International Electron Device Meeting (IEDM 12’), San Francisco, CA, USA, 2012.
R.J. Mears, N. Xu*, N. Damrongplasit, H. Takeuchi, R.J. Stephenson, N.W. Cody, A. Yipton, X. Huang, M. Hytha, T.-J. King Liu, “Simultaneous Carrier Transport Enhancement and Variability Reduction by Insertion of Partial Monolayers of Oxygen,” IEEE Silicon Nanoelectronics Workshop (SNW 12’), Honolulu, HI, Tech. Dig. p.33-34, 2012.

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