D.A. Hodges

EECS Department, University of California, Berkeley

Technical Report No. UCB/ERL M58

, 1964

http://www2.eecs.berkeley.edu/Pubs/TechRpts/1964/ERL-m-58.pdf

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BibTeX citation:

@techreport{Hodges:M58,
    Author= {Hodges, D.A.},
    Title= {High-Performance Field-Effect Transistors Formed by Impurity Redistribution},
    Year= {1964},
    Month= {Feb},
    Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1964/28847.html},
    Number= {UCB/ERL M58},
}

EndNote citation:

%0 Report
%A Hodges, D.A. 
%T High-Performance Field-Effect Transistors Formed by Impurity Redistribution
%I EECS Department, University of California, Berkeley
%D 1964
%@ UCB/ERL M58
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1964/28847.html
%F Hodges:M58