D.A. Hodges
EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M58
February 1964
http://www2.eecs.berkeley.edu/Pubs/TechRpts/1964/ERL-m-58.pdf
BibTeX citation:
@techreport{Hodges:M58, Author = {Hodges, D.A.}, Title = {High-Performance Field-Effect Transistors Formed by Impurity Redistribution}, Institution = {EECS Department, University of California, Berkeley}, Year = {1964}, Month = {Feb}, URL = {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1964/28847.html}, Number = {UCB/ERL M58} }
EndNote citation:
%0 Report %A Hodges, D.A. %T High-Performance Field-Effect Transistors Formed by Impurity Redistribution %I EECS Department, University of California, Berkeley %D 1964 %@ UCB/ERL M58 %U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1964/28847.html %F Hodges:M58