Effects of DC Bias on the Kinetics and Electrical Properties of Silicon Dioxide Grown in an Electron Cyclotron Resonance Plasma

D.A. Carl, D.W. Hess, Michael A. Lieberman, T.D. Nguyen and R. Gronsky

EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M91/5
January 1991

http://www2.eecs.berkeley.edu/Pubs/TechRpts/1991/ERL-91-5.pdf


BibTeX citation:

@techreport{Carl:M91/5,
    Author = {Carl, D.A. and Hess, D.W. and Lieberman, Michael A. and Nguyen, T.D. and Gronsky, R.},
    Title = {Effects of DC Bias on the Kinetics and Electrical Properties of Silicon Dioxide Grown in an Electron Cyclotron Resonance Plasma},
    Institution = {EECS Department, University of California, Berkeley},
    Year = {1991},
    Month = {Jan},
    URL = {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1991/1679.html},
    Number = {UCB/ERL M91/5}
}

EndNote citation:

%0 Report
%A Carl, D.A.
%A Hess, D.W.
%A Lieberman, Michael A.
%A Nguyen, T.D.
%A Gronsky, R.
%T Effects of DC Bias on the Kinetics and Electrical Properties of Silicon Dioxide Grown in an Electron Cyclotron Resonance Plasma
%I EECS Department, University of California, Berkeley
%D 1991
%@ UCB/ERL M91/5
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1991/1679.html
%F Carl:M91/5