Catalog Description: Integrated circuit device fabrication and surface micromachining technology. Thermal oxidation, ion implantation, impurity diffusion, film deposition, expitaxy, lithography, etching, contacts and interconnections, and process integration issues. Device design and mask layout, relation between physical structure and electrical/mechanical performance. MOS transistors and poly-Si surface microstructures will be fabricated in the laboratory and evaluated.

Units: 4

Prerequisites: PHYSICS 7B

Fall: 3 hours of lecture and 3 hours of laboratory per week
Spring: 3 hours of lecture and 3 hours of laboratory per week

Grading basis: letter

Final exam status: Written final exam conducted during the scheduled final exam period

Class Schedule (Fall 2024):
EE 143 – MoWe 09:30-10:59, Cory 540AB – Grigory Tikhomirov

Class homepage on inst.eecs

Department Notes:

Course objectives: Process integration design of MOS and MEMS devices based on fabrication modules. To establish relationships between process parameters and device parameters. Implementation of fabrication and testing methodologies in laboratory.

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