EE 230A. Integrated-Circuit Devices

Catalog Description: Overview of electronic properties of semiconductors. Metal-semiconductor contacts, pn junctions, bipolar transistors, and MOS field-effect transistors. Properties that are significant to device operation for integrated circuits. Silicon device fabrication technology.

Units: 4.0

Prerequisites: 40 or 100.

Credit Restrictions: Students will receive no credit for Electrical Engineering 230A after taking Electrical Engineering 130.

Fall: 3 hours of lecture and 1 hour of discussion per week
Spring: 3 hours of lecture and 1 hour of discussion per week

Grading basis: letter

Final exam status: Written final exam conducted during the scheduled final exam period

Also listed as: EL ENG 230A

Class Schedule (Spring 2018):
TuTh 2:00PM - 3:29PM, Cory 521 – Sayeef Salahuddin

Class homepage on inst.eecs

General Catalog listing

Department Notes:

Course objectives: This course provides a comprehensive introduction to the electronic properties of semiconductors, technology, the theories and practices of the most important electronic devices, and their impacts on the performance of integrated circuits. Lectures and homework exercises and design project emphasize the ability to formulate problems, problem solving skills and make device design tradeoffs.

Topics covered:

  • Semiconductor electronics: Band picture, electrons, holes, effective mass, doping, density of states, electron statistics, Fermi level, mobility, diffusion, recombination, continuity equations
  • Fabrication technologies: Introduction to lithography, doping, deposition and planarization technologies.
  • PN Junction: Field, potential, charge distribution in step pn junctions, current-voltage relations, generation and recombination current, junction capacitance
  • MOS Capacitors: Energy-band diagrams, flat-band, accumulation, depletion, inversion, threshold voltage, capacitance-voltage characteristics
  • MOSFETs: Current-voltage characteristics, velocity saturation, CMOS speed and power, MOS technology, leakage current, Vt roll-off and drain-induced barrier lowering, scaling limits, alternative technologies, computer simulations
  • Metal-Semiconductor Contact: Schottky diode, current-voltage characteristics, ohmic contacts
  • Bipolar Transistors: Structure and operation, emitter efficiency, current gain, static characteristics, charge-control model, cut-off frequency

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