Catalog Description: Physics of solid-state electronics. Review of quantum-mechanical principles, crystal structure, lattice vibrations, band theory, electrons and holes, diffusion and drift, recombination, high-field phenomena, optical effects, device applications. Several one-hour minilabs done in pairs with the aid of a Teaching Assistant.

Units: 3

Prerequisites: 130 (which may be taken concurrently).

Formats:
Spring: 3 hours of lecture per week
Fall: 3 hours of lecture per week

Grading basis: letter

Final exam status: Written final exam conducted during the scheduled final exam period

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General Catalog listing

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Department Notes:

Course objectives: To acquaint the student with semiconductor fundamentals with which to understand and utilize a variety of semiconductor and other solid state materials and devices.

Topics covered:

• Introduction, atomic structure, quantum mechanics of electrons
• Basic free electron theory, statistical mechanics.
• States of matter, bonding of atoms crystals and crystal symmetry, Lattice types, crystal defects, physical properties.
• Reciprocal Lattice, Bragg Scattering, Lattice dynamics, Phonons, Coupled Oscillators.
• Phase and group velocity, waves in crystals. Energy bands in solids, metals and insulators. Fermi levels and carrier concentrations.
• Semiconducting materials, Silicon and GaAs examples, Band structure of semiconducting materials, valence and conduction band model of semiconductors.
• Defects, dopants and traps, equilibrium characteristics of doped semiconductors
• Carrier transport, drift, mobility, conductivity, diffusion, the Hall effect
• The Einstein relations, equilibrium across interfaces, ohmic and rectifying junctions.
• Excess carriers in semiconductors, injection, recombination, quasi-Fermi levels
• Transport and continuity equations, and the basic equations for semiconductor devices
• P-N junctions, abrupt, linear. Modeling semiconductor devices.
• Tunneling in semiconductors, Zener and avalanche breakdown in diodes
• Ohmic contacts, tunnel diodes and Schottky barrier diodes, heterojunctions
• MOS devices, interface between silicon and silicon dioxide, transistors and charge coupled devices, structures and modes
• High mobility devices, short-channel effects, quantum tunneling effects and devices, ballistic effects