Articles in journals or magazines
- A. I. Khan, J. Kim, U. Sikder, K. Das, T. Rodriguez, R. Soman, S. Chowdhury, and S. Salahuddin, "Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors," Science, vol. 389, no. 6759, pp. 508-511, July 2025.
- A. I. Khan, A. Ramdas, E. Lindgren, H. Kim, B. Won, X. Wu, K. Saraswat, C. Chen, Y. Suzuki, F. H. D. Jornada, I. Oh, and E. Pop, "Surface conduction and reduced electrical resistivity in ultrathin noncrystalline NbP semimetal," Science, vol. 387, no. 6729, pp. 62-67, Jan. 2025.
- M. Noshin, H. Kwon, A. I. Khan, S. Alaei, C. Meng, M. Asheghi, Y. Suzuki, S. Salahuddin, K. Goodson, and S. Chowdhury, "Probing the Thermal and Electrical Properties of Ultrawide Bandgap Nitrogen-Polar AlGaN Heterostructures," Advanced Functional Materials, vol. 34, no. 2403474, May 2024.
- X. Wu, A. I. Khan, H. Lee, C. Hsu, H. Zhang, H. Yu, N. Roy, A. Davydov, I. Takeuchi, X. Bao, H. P. Wong, and E. Pop, "Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory," Nature Communications, vol. 15, no. 13, Jan. 2024.
- A. I. Khan, H. Yu, H. Zhang, J. R. Goggin, H. Kwon, X. Wu, C. Perez, K. Neilson, M. Asheghi, K. Goodson, P. Vora, A. Davydov, I. Takeuchi, and E. Pop, "Energy efficient neuro-inspired phase change memory based on Ge4Sb6Te7 as a novel epitaxial nanocomposite," Advanced Materials, vol. 35, no. 2300107, Jan. 2023.
- A. I. Khan, A. Daus, R. Islam, K. Neilson, H. R. Lee, H. P. Wong, and E. Pop, "Ultralow–switching current density multilevel phase-change memory on a flexible substrate," Science, vol. 373, no. 6560, pp. 1243-1247, Sep. 2021.
Articles in conference proceedings
- A. I. Khan, C. Perez, X. Wu, B. Won, K. Kim, H. Kwon, P. Ramesh, K. Neilson, M. Asheghi, K. Saraswat, Z. Lee, I. Oh, H. P. Wong, K. Goodson, and E. Pop, "First Demonstration of Ge2Sb2Te5-Based Superlattice Phase Change Memory with Low Reset Current Density (~3 MA/cm2) and Low Resistance Drift (~0.002 at 105°C)," in IEEE Symposium on VLSI Technology and Circuits, 2022, pp. 310-311.