Books

• D. T. Attwood and J. Bokor, Eds., Short Wavelength Coherent Radiation: Generation and Applications, American Institute of Physics Conference Proceedings; Optical Science and Engineering Series (No. 7), New York, NY: AIP Press, 1986.

Articles in journals or magazines

• Y. Kang, J. Bokor, and V. Stojanovic, "Design Requirements for a Spintronic MTJ Logic Device for Pipelined Logic Applications," IEEE Transactions on Electron Devices, vol. 63, no. 4, pp. 1754--1761, 2016.
• S. B. Desai, S. R. Madhvapathy, A. B. Sachid, J. P. Llinas, Q. Wang, G. H. Ahn, G. Pitner, M. J. Kim, J. Bokor, C. Hu, H. P. Wong, and A. Javey, "MoS2 transistors with 1-nanometer gate lengths," Science, vol. 354, no. 6308, pp. 99--102, Oct. 2016.
• S. B. Desai, S. R. Madhvapathy, A. B. Sachid, J. P. Llinas, Q. Wang, G. H. Ahn, G. Pitner, M. J. Kim, J. Bokor, C. Hu, H. P. Wong, and A. Javey, "MoS2 transistors with 1-nanometer gate lengths," Science, vol. 354, no. 6308, pp. 99--102, Oct. 2016.
• A. Ismach, C. Druzgalski, S. Penwell, A. Schwartzberg, M. Zheng, A. Javey, J. Bokor, and Y. Zhang, "Direct Chemical Vapor Deposition of Graphene on Dielectric Surfaces," NANO LETTERS, vol. 10, no. 5, pp. 1542-1548, May 2010.
• A. C. Ford, J. C. Ho, Y. Chueh, Y. Tseng, Z. Fan, J. Guo, J. Bokor, and A. Javey, "Diameter-Dependent Electron Mobility of InAs Nanowires," NANO LETTERS, vol. 9, no. 1, pp. 360-365, Jan. 2009.
• C. C. Lo, J. Bokor, T. Schenkel, J. He, A. M. Tyryshkin, and S. A. Lyon, "Spin dependent scattering off neutral antimony donors in ^28 Si field-effect transistors," Applied Physics Letters, vol. 91, no. 24, pp. 242106-1-3, Dec. 2007.
• A. Batra, C. D. Weis, J. Reijonen, A. Persaud, T. Schenkel, S. Cabrini, C. C. Lo, and J. Bokor, "Detection of low energy single ion impacts in micron scale transistors at room temperature," Applied Physics Letters, vol. 91, no. 19, pp. 193502-1-3, Nov. 2007.
• Y. Wang and J. Bokor, "Ultra-high-resolution monolithic thermal bubble inkjet print head," J. Micro/Nanolithography, MEMS, and MOEMS, vol. 6, no. 4, pp. 043009-1-10, Oct. 2007.
• A. San Paulo, J. P. Black, R. M. White, and J. Bokor, "Detection of nanomechanical vibrations by dynamic force microscopy in higher cantilever eigenmodes," Applied Physics Letters, vol. 91, no. 5, pp. 053116-, July 2007.
• S. Wang, A. Barman, H. Schmidt, J. D. Maas, A. R. Hawkiins, S. Kwon, B. Harteneck, S. Cabrini, and J. Bokor, "Optimization of nano-magneto-optic sensitivity using dual dielectric layer enhancement," Applied Physics Letters, vol. 90, no. 25, pp. 252504-1-3, June 2007.
• A. San Paulo, E. Quevy, J. Black, R. T. Howe, R. M. White, and J. Bokor, "Mode shape imaging of out-of-plane and in-plane vibrating RF micromechanical resonators by atomic force microscopy," Microelectronic Engineering: Proc. 32nd Intl. Conf. on Micro- and Nano-Engineering, vol. 84, no. 5-8, pp. 1354-1357, May 2007.
• A. Barman, S. Wang, J. Maas, A. R. Hawkins, S. Kwon, J. Bokor, A. Liddle, and H. Schmidt, "Size dependent damping in picosecond dynamics of single nanomagnets," Applied Physics Letters, vol. 90, no. 20, pp. 202504-1-3, May 2007.
• A. San Paulo, N. Arellano, J. A. Plaza, R. He, C. Carraro, R. Maboudian, R. T. Howe, J. Bokor, and P. Yan, "Suspended mechanical structures based on elastic silicon nanowire arrays," Nano Letters, vol. 7, no. 4, pp. 1100-1104, April 2007.
• F. R. Bradbury, A. M. Tyryshkin, G. Sabouret, J. Bokor, T. Schenkel, and S. A. Lyon, "Stark tuning of donor electron spins in silicon," Physical Review Letters, vol. 97, no. 17, pp. 176404-1-4, Oct. 2006.
• A. Barman, S. Wang, J. D. Maas, A. R. Hawkins, S. Kwon, A. Liddle, J. Bokor, and H. Schmidt, "Magneto-optical observation of picosecond dynamics of single nanomagnets," Nano Letters, vol. 6, no. 12, pp. 2939-2944, Aug. 2006.
• Y. Tseng, K. Phoa, D. Carlton, and J. Bokor, "Effect of diameter variation in a large set of carbon nanotube transistors," Nano Letters, vol. 6, no. 7, pp. 1364-1368, May 2006.
• T. Schenkel, J. A. Liddle, A. Persaud, A. M. Tyryshkin, S. A. Lyon, R. de Sousa, K. B. Whaley, J. Bokor, J. Shangkuan, and I. Chakarov, "Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon," Applied Physics Letters, vol. 88, no. 11, pp. 112101, March 2006.
• S. Kwon, X. Yan, A. M. Contreras, J. A. Liddle, G. A. Somorjai, and J. Bokor, "Fabrication of metallic nanodots in large-area arrays by mold-to-mold cross imprinting (MTMCI)," Nano Letters, vol. 5, no. 12, pp. 2557-2562, Dec. 2005.
• J. Lin, P. Xuan, and J. Bokor, "Characterization of chemical vapor deposition growth yields of carbon nanotube transistors," Japanese J. Applied Physics, vol. 44, no. 9A, pp. 6859-6861, Sep. 2005.
• S. Xiong, T. King Liu, and J. Bokor, "A comparison study of symmetric ultrathin-body double-gate devices with metal source/drain and doped source/drain," IEEE Trans. Electron Devices, vol. 52, no. 8, pp. 1859-1867, Aug. 2005.
• A. San Paulo, J. Bokor, R. T. Howe, R. He, P. Yang, D. Gao, C. Cararo, and R. Maboudian, "Mechanical elasticity of single and double clamped silicon nanobeams fabricated by the vapor-liquid-solid method," Applied Physics Letters, vol. 87, no. 5, pp. 053111-1-3, Aug. 2005.
• N. Pu, E. Pan, and J. Bokor, "Sensitive detection of laser damage to Mo/Si multilayers by picosecond ultrasonics," Applied Physics B: Lasers and Optics, vol. 79, no. 1, pp. 107-112, July 2004.
• Y. Tseng, P. Xuan, A. Javey, R. Malloy, Q. Wang, J. Bokor, and H. Dai, "Monolithic integration of carbon nanotube devices with silicon MOS technology," Nano Letters, vol. 4, no. 1, pp. 123-127, Jan. 2004.
• N. Pu and J. Bokor, "Study of surface and bulk acoustic phonon excitations in superlattices using picosecond ultrasonics," Physical Review Letters, vol. 91, no. 7, pp. 076101-1-4, Aug. 2003.
• Y. Yeo, V. Subramanian, J. Kedzierski, P. Xuan, T. King Liu, J. Bokor, and C. Hu, "Design and fabrication of 50-nm thin-body p-MOSFETs with a SiGe heterostructure channel (Paul Rappaport Award for 2002)," IEEE Trans. Electron Devices, vol. 49, no. 2, pp. 279-286, Feb. 2002.
• D. Hisamoto, W. Lee, J. Kedzierski, H. Takeuchi, K. Asano, C. Kuo, E. Anderson, T. King Liu, J. Bokor, and C. Hu, "FinFET--A self-aligned double-gate MOSFET scalable to 20 nm," IEEE Trans. Electron Devices, vol. 47, no. 12, pp. 2320-2325, Dec. 2000.
• S. H. Lee, P. Naulleau, K. A. Goldberg, F. Piao, W. G. Oldham, and J. Bokor, "Phase-shifting point-diffraction interferometry at 193 nm," Applied Optics, vol. 39, no. 31, pp. 5768-5772, Nov. 2000.
• P. P. Naulleau, K. A. Goldberg, S. H. Lee, C. Chang, D. T. Attwood, and J. Bokor, "Extreme-ultraviolet phase-shifting point-diffraction interferometer: A wave-front metrology tool with subangstrom reference-wave accuracy," Applied Optics, vol. 38, no. 35, pp. 7252-7263, Dec. 1999.
• D. T. Attwood, P. Naulleau, K. A. Goldberg, E. Tejnil, C. Chang, R. Beguiristain, P. Batson, J. Bokor, E. M. Gullikson, M. Koike, H. Medecki, and J. H. Underwood, "Invited Paper: Tunable coherent radiation in the soft X-ray and extreme ultraviolet spectral regions," IEEE J. Quantum Electronics, vol. 35, no. 5, pp. 709-720, May 1999.
• D. T. Attwood, E. H. Anderson, P. J. Batson, H. R. Beguiristain, J. Bokor, K. A. Goldberg, E. M. Gullikson, K. H. Jackson, K. Nguyen, M. Koike, H. Medecki, S. Mrowka, R. E. Tackaberry, E. Tejnil, and J. H. Underwood, "At-wavelength metrologies for extreme ultraviolet lithography (in Japanese)," J. Future Electron Devices, vol. 9, no. 1, pp. 5-14, Nov. 1998.
• J. Bokor, A. R. Neureuther, and W. G. Oldham, "Advanced lithography for ULSI," IEEE Circuits and Devices Magazine, vol. 12, no. 1, pp. 11-15, Jan. 1996.

Articles in conference proceedings

• A. San Paulo, J. Black, D. Garcia-Sanchez, M. J. Esplandiu, A. Aguasca, J. Bokor, F. Perez-Murano, and A. Bachtold, "Mechanical detection and mode shape imaging of vibrational modes of micro and nanomechanical resonators by dynamic force microscopy," in J. Physics, Journal of Physics Conference Series: Proc.17th Intl. Vacuum Congress (IV-17), 13th Intl. Conf. on Surface Science (ICSS-13), Intl. Conf. on Nanoscience and Technology (ICN+T 2007), Vol. 100, Bristol, England, UK: IOP Publishing Ltd., 2008, pp. 052009-1-5.
• F. R. Bradbury, A. M. Tyryshkin, G. Sabouret, J. Bokor, T. Schenkel, and S. A. Lyon, "Stark tuning of donor electron spins in silicon," in Physics of Semiconductors: Proc. 28th Intl. Conf. (ICPS 2006), W. Jantsch and F. Schaffler, Eds., American Institute of Physics Conference Proceedings, Vol. 893, Melville, NY: American Institute of Physics, 2007, pp. 1093-1094.
• J. Bokor, "Prospects for emerging nanoelectronics in mainstream information processing systems," in IEEE/ACM Intl. Conf. on Computer Aided Design -- Digest of Technical Papers, New York, NY: ACM Press, 2006, pp. 647-648.
• Y. Wang, J. Bokor, and A. Lee, "Maskless lithography using drop-on-demand inkjet printing method," in Proc. SPIE: Emerging Lithographic Technologies VIII, S. Mackay, Ed., Vol. 5374, Bellingham, WA: SPIE, 2004, pp. 628-636.
• P. Xuan, M. She, B. Harteneck, A. Liddle, J. Bokor, and T. King Liu, "FinFET SONOS flash memory for embedded applications," in 2003 Intl. Electron Devices Meeting (IEDM '03). Technical Digest, Piscataway, NJ: IEEE Press, 2003, pp. 609-612.
• Y. Choi, J. Grunes, J. S. Lee, J. Zhu, G. A. Somorjai, L. P. Lee, and J. Bokor, "Sub-lithographic patterning technology for nanowire model catalysts and DNA label-free hybridization detection," in Proc. SPIE: Nanofabrication Technologies, E. A. Dobisz, Ed., Vol. 5220, Bellingham, WA: SPIE, 2003, pp. 10-19.
• B. Yu, L. Chang, S. Ahmed, H. Wang, S. Bell, C. Yang, C. Tabery, C. Ho, Q. Xiang, T. King Liu, J. Bokor, C. Hu, M. Lin, and D. Kyser, "FinFET scaling to 10nm gate length," in 2002 IEEE Intl. Electron Devices Meeting Technical Digest, Piscataway, NJ: IEEE Press, 2002, pp. 251-254.
• B. Yu, L. Chang, S. Ahmed, H. Wang, S. Bell, C. Yang, C. Tabery, C. Ho, T. King Liu, J. Bokor, M. Lin, and D. Kyser, "FinFET scaling: Towards 10nm gate length," in IEDM '02 Technical Digest, Piscataway, NJ: IEEE Press, 2002, pp. 251-254.
• J. Kedzierski, P. Xuan, E. H. Anderson, J. Bokor, T. King Liu, and C. Hu, "Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime," in 2000 Intl. Electron Devices Meeting Technical Digest, Piscataway, NJ: IEEE Press, 2000, pp. 57-60.
• S. Jeong, C. Lai, S. Rekawa, C. C. Walton, and J. Bokor, "Actinic defect counting statistics over 1-cm2 area of EUVL mask blank," in Proc. SPIE -- Emerging Lithographic Technologies IV, E. A. Dobisz, Ed., Vol. 3997, Bellingham, WA: SPIE, 2000, pp. 431-440.
• K. Nguyen, D. Attwood, and T. K. Gustafson, "Source Issues Relevant to X-ray Lithography," in OSA Proceedings on Soft-X-ray Projection Lithography, J. Bokor, Ed., Vol. 12, Optical Society of America, 1991, pp. 62-67.

Technical Reports

• S. Smith, "Quantum Transport and Phase-Field Modeling for Next-Generation Logic Devices," S. Salahuddin, J. Bokor, and J. Neaton, Eds., EECS Department, University of California, Berkeley, Tech. Rep. UCB/EECS-2017-128, July 2017.
• J. Bokor and D. Angelakos, "Joint Services Electronics Programs," EECS Department, University of California, Berkeley, Tech. Rep. UCB/ERL M96/137, May 1996.

Patents

• T. Schenkel, C. C. Lo, C. Weis, S. Lyon, A. Alexei, and J. Bokor, "Scalable quantum computer architecture with coupled donor-quantum dot qubits," U.S. Patent 8,816,325. Aug. 2014.
• B. Lambson, Z. Gu, D. Carlton, and J. Bokor, "Concave nanomagnets with widely tunable anisotropy," U.S. Patent 8,766,754. July 2014.
• J. Zhu, J. Grunes, Y. Choi, J. Bokor, and G. Samorjai, "Methods for fabrication of positional and compositionally controlled nanostructures on substrate," U.S. Patent 8,486,287. July 2013.
• J. Bokor, N. C. Emley, and D. Carlton, "Nanomagnetic signal propagation and logic gates," U.S. Patent 8,134,441. March 2012.
• D. Carlton, N. C. Emley, and J. Bokor, "Nanomagnetic register," U.S. Patent 8,138,874. March 2012.
• J. Bokor and P. Naulleau, "System for interferometric distortion measurements that define an optical path," U.S. Patent 6,559,952. May 2003.
• J. Bokor and Y. Lin, "Method and apparatus for inspecting reflection masks for defects," U.S. Patent 6,555,828. April 2003.
• J. Bokor and S. Jeong, "Multi-level scanning method for defect inspection," U.S. Patent 6,484,306. Nov. 2002.
• C. Hu, T. King, V. Subramanian, L. Chang, X. Huang, Y. Choi, J. T. Kedzierski, N. Lindert, J. Bokor, and W. Lee, "FinFET transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture," U.S. Patent 6,413,802. July 2002.
• J. Bokor and A. M. Johnson, "High speed photodetector having dual transmission line geometry," U.S. Patent 4,933,542. June 1990.
• J. Bokor, A. M. Johnson, and R. H. Storz, "High speed circuit measurements using photoemission sampling," U.S. Patent 4,721,910. Jan. 1988.

Masters Reports

• Z. Lu, "Exploration of surface states in a monolayer MoS2 transistor by pulsed gating," S. Salahuddin and J. Bokor, Eds., EECS Department, University of California, Berkeley, Tech. Rep. UCB/EECS-2016-188, Dec. 2016.
• H. Abdel-Raziq, "Enhancement of the Spin Hall Effect in Heavy Metal Bilayers," S. Salahuddin and J. Bokor, Eds., EECS Department, University of California, Berkeley, Tech. Rep. UCB/EECS-2016-29, May 2016.