John L. Reynolds

EECS Department, University of California, Berkeley

Technical Report No. UCB/ERL M81/2

, 1981

http://www2.eecs.berkeley.edu/Pubs/TechRpts/1981/ERL-m-81-2.pdf

Computer simulation of plasma etched two-dimensional profiles is explored. The model divides the process into three rate components: isotropic or chemically reactive etching, anisotropic or directional etching, and orientationally dependent ion beam etching. The algorithm extends the user-oriented computer program for Simulation And Modelling of Profiles in Lithography and Etching (SAMPLE) which simulates the time evolution of line-edge profiles by advancing nodes on a string. Applications here include residue left at a step using anisotropic etching and undercut produced using arsenic implanted poly-silicon layers.

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BibTeX citation:

@mastersthesis{Reynolds:M81/2,
    Author= {Reynolds, John L.},
    Title= {Simulation of Dry Etched Line-Edge Profiles},
    School= {EECS Department, University of California, Berkeley},
    Year= {1981},
    Month= {Jan},
    Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1981/9611.html},
    Number= {UCB/ERL M81/2},
    Abstract= {Computer simulation of plasma etched two-dimensional profiles
is explored.  The model divides the process into three rate
components: isotropic or chemically reactive etching, anisotropic
or directional etching, and orientationally dependent ion beam
etching.  The algorithm extends the user-oriented computer program
for Simulation And Modelling of Profiles in Lithography and Etching
(SAMPLE) which simulates the time evolution of line-edge profiles
by advancing nodes on a string.  Applications here include residue
left at a step using anisotropic etching and undercut produced
using arsenic implanted poly-silicon layers.},
}

EndNote citation:

%0 Thesis
%A Reynolds, John L. 
%T Simulation of Dry Etched Line-Edge Profiles
%I EECS Department, University of California, Berkeley
%D 1981
%@ UCB/ERL M81/2
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1981/9611.html
%F Reynolds:M81/2