John L. Reynolds
EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M81/2
January 1981
http://www2.eecs.berkeley.edu/Pubs/TechRpts/1981/ERL-m-81-2.pdf
Computer simulation of plasma etched two-dimensional profiles is explored. The model divides the process into three rate components: isotropic or chemically reactive etching, anisotropic or directional etching, and orientationally dependent ion beam etching. The algorithm extends the user-oriented computer program for Simulation And Modelling of Profiles in Lithography and Etching (SAMPLE) which simulates the time evolution of line-edge profiles by advancing nodes on a string. Applications here include residue left at a step using anisotropic etching and undercut produced using arsenic implanted poly-silicon layers.
BibTeX citation:
@mastersthesis{Reynolds:M81/2, Author = {Reynolds, John L.}, Title = {Simulation of Dry Etched Line-Edge Profiles}, School = {EECS Department, University of California, Berkeley}, Year = {1981}, Month = {Jan}, URL = {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1981/9611.html}, Number = {UCB/ERL M81/2}, Abstract = {Computer simulation of plasma etched two-dimensional profiles is explored. The model divides the process into three rate components: isotropic or chemically reactive etching, anisotropic or directional etching, and orientationally dependent ion beam etching. The algorithm extends the user-oriented computer program for Simulation And Modelling of Profiles in Lithography and Etching (SAMPLE) which simulates the time evolution of line-edge profiles by advancing nodes on a string. Applications here include residue left at a step using anisotropic etching and undercut produced using arsenic implanted poly-silicon layers.} }
EndNote citation:
%0 Thesis %A Reynolds, John L. %T Simulation of Dry Etched Line-Edge Profiles %I EECS Department, University of California, Berkeley %D 1981 %@ UCB/ERL M81/2 %U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1981/9611.html %F Reynolds:M81/2