Simulation and Modeling of Evaporated Deposition Profiles

Chiakang Sung

EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M81/8
February 1981

http://www2.eecs.berkeley.edu/Pubs/TechRpts/1981/ERL-m-81-8.pdf

This report presents a program for the simulation of metalization. The simulation is used to investigate metal step coverage for a variety of source and substrate configurations. The models used for deposition combine analytic and numerical summations. The deposition rate is derived as an analytic function, and the simulation proceeds by summing the deposition through a series of finite time-steps. Simulations have been made to model metalization over steps with the following source-substrate geometries: (1) unidirectional source, (2) dual evaporation sources, (3) hemispherical vapor source, (4) point sources with planetary-mounted substrate. The modeling technique has also been extended to deposition processes with elevated substrate temperature.

BibTeX citation:

@mastersthesis{Sung:M81/8,
    Author = {Sung, Chiakang},
    Title = {Simulation and Modeling of Evaporated Deposition Profiles},
    School = {EECS Department, University of California, Berkeley},
    Year = {1981},
    Month = {Feb},
    URL = {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1981/9613.html},
    Number = {UCB/ERL M81/8},
    Abstract = {This report presents a program for the simulation of metalization.              The simulation is used to investigate metal step coverage for a
variety of source and substrate configurations.                                 
The models used for deposition combine analytic and numerical                   summations.  The deposition rate is derived as an analytic
function, and the simulation proceeds by summing the deposition                through a series of finite time-steps.  Simulations have been
made to model metalization over steps with the following                        source-substrate geometries:  (1) unidirectional source, (2)
dual evaporation sources, (3) hemispherical vapor source, (4) point             sources with planetary-mounted substrate.  The modeling
technique has also been extended to deposition processes with
elevated substrate temperature.}
}

EndNote citation:

%0 Thesis
%A Sung, Chiakang
%T Simulation and Modeling of Evaporated Deposition Profiles
%I EECS Department, University of California, Berkeley
%D 1981
%@ UCB/ERL M81/8
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1981/9613.html
%F Sung:M81/8