High-Frequency Voltage Amplification and Comparison in a One-Micron NMOS Technology.
David C.-F. Soo
EECS Department, University of California, Berkeley
Technical Report No. UCB/ERL M85/96
1985
This publication is archived. It is kept only for reference purposes, so it is no longer being updated and may not meet accessibility standards. If you need this content in a different format, please email webteam@eecs.berkeley.edu.
http://www2.eecs.berkeley.edu/Pubs/TechRpts/1985/Archive/ERL-85-96.pdf
Advisors: Robert G. Meyer
BibTeX citation:
@phdthesis{Soo:M85/96,
Author= {Soo, David C.-F.},
Title= {High-Frequency Voltage Amplification and Comparison in a One-Micron NMOS Technology.},
School= {EECS Department, University of California, Berkeley},
Year= {1985},
Month= {Dec},
Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1985/604.html},
Number= {UCB/ERL M85/96},
}
EndNote citation:
%0 Thesis %A Soo, David C.-F. %T High-Frequency Voltage Amplification and Comparison in a One-Micron NMOS Technology. %I EECS Department, University of California, Berkeley %D 1985 %@ UCB/ERL M85/96 %U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1985/604.html %F Soo:M85/96