Shallow Diffusion of GeSe in GaAs Using Rapid Thermal Annealing to Form Non-Alloyed Ohmic Contacts

N. Kepler

EECS Department, University of California, Berkeley

Technical Report No. UCB/ERL M85/104

1985

This publication is archived. It is kept only for reference purposes, so it is no longer being updated and may not meet accessibility standards. If you need this content in a different format, please email webteam@eecs.berkeley.edu.

http://www2.eecs.berkeley.edu/Pubs/TechRpts/1985/Archive/ERL-85-104.pdf

BibTeX citation:

@techreport{Kepler:M85/104,
    Author= {Kepler, N.},
    Title= {Shallow Diffusion of GeSe in GaAs Using Rapid Thermal Annealing to Form Non-Alloyed Ohmic Contacts},
    Year= {1985},
    Month= {Dec},
    Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1985/622.html},
    Number= {UCB/ERL M85/104},
}

EndNote citation:

%0 Report
%A Kepler, N. 
%T Shallow Diffusion of GeSe in GaAs Using Rapid Thermal Annealing to Form Non-Alloyed Ohmic Contacts
%I EECS Department, University of California, Berkeley
%D 1985
%@ UCB/ERL M85/104
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1985/622.html
%F Kepler:M85/104