Shallow Diffusion of GeSe in GaAs Using Rapid Thermal Annealing to Form Non-Alloyed Ohmic Contacts
N. Kepler
EECS Department, University of California, Berkeley
Technical Report No. UCB/ERL M85/104
1985
http://www2.eecs.berkeley.edu/Pubs/TechRpts/1985/ERL-85-104.pdf
BibTeX citation:
@techreport{Kepler:M85/104,
Author= {Kepler, N.},
Title= {Shallow Diffusion of GeSe in GaAs Using Rapid Thermal Annealing to Form Non-Alloyed Ohmic Contacts},
Year= {1985},
Month= {Dec},
Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1985/622.html},
Number= {UCB/ERL M85/104},
}
EndNote citation:
%0 Report %A Kepler, N. %T Shallow Diffusion of GeSe in GaAs Using Rapid Thermal Annealing to Form Non-Alloyed Ohmic Contacts %I EECS Department, University of California, Berkeley %D 1985 %@ UCB/ERL M85/104 %U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1985/622.html %F Kepler:M85/104