Shallow Diffusion of GeSe in GaAs Using Rapid Thermal Annealing to Form Non-Alloyed Ohmic Contacts
N. Kepler
EECS Department, University of California, Berkeley
Technical Report No. UCB/ERL M85/104
, 1985
http://www2.eecs.berkeley.edu/Pubs/TechRpts/1985/ERL-85-104.pdf
BibTeX citation:
@techreport{Kepler:M85/104, Author= {Kepler, N.}, Title= {Shallow Diffusion of GeSe in GaAs Using Rapid Thermal Annealing to Form Non-Alloyed Ohmic Contacts}, Year= {1985}, Month= {Dec}, Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1985/622.html}, Number= {UCB/ERL M85/104}, }
EndNote citation:
%0 Report %A Kepler, N. %T Shallow Diffusion of GeSe in GaAs Using Rapid Thermal Annealing to Form Non-Alloyed Ohmic Contacts %I EECS Department, University of California, Berkeley %D 1985 %@ UCB/ERL M85/104 %U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1985/622.html %F Kepler:M85/104