Shallow Diffusion of GeSe in GaAs Using Rapid Thermal Annealing to Form Non-Alloyed Ohmic Contacts

N. Kepler

EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M85/104
December 1985

http://www2.eecs.berkeley.edu/Pubs/TechRpts/1985/ERL-85-104.pdf

BibTeX citation:

@techreport{Kepler:M85/104,
    Author = {Kepler, N.},
    Title = {Shallow Diffusion of GeSe in GaAs Using Rapid Thermal Annealing to Form Non-Alloyed Ohmic Contacts},
    Institution = {EECS Department, University of California, Berkeley},
    Year = {1985},
    Month = {Dec},
    URL = {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1985/622.html},
    Number = {UCB/ERL M85/104}
}

EndNote citation:

%0 Report
%A Kepler, N.
%T Shallow Diffusion of GeSe in GaAs Using Rapid Thermal Annealing to Form Non-Alloyed Ohmic Contacts
%I EECS Department, University of California, Berkeley
%D 1985
%@ UCB/ERL M85/104
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1985/622.html
%F Kepler:M85/104