P.D. Flanner III

EECS Department, University of California, Berkeley

Technical Report No. UCB/ERL M86/57

, 1986

http://www2.eecs.berkeley.edu/Pubs/TechRpts/1986/ERL-86-57.pdf

As optical lithography processing is pushed into the sub-micron region, the ability to construct a mask that produces the required image in photoresist becomes a limiting factor. As dimensions approach or go below the classical resolution limit, the interference of diffracted light between adjacent features is a factor that must be taken into account when designing layout rules. Computer simulation can be a valuable tool in the study of the imaging of small features and their proximity effects.

The SAMPLE process simulation program can simulate the aerial image and processing of one-dimensional features, basically straight parallel lines. However, most cases of feature proximity, such as contacts near contacts or lines, lines near pads, defects, and lines that bend are inherently two-dimensional and require a two-dimensional process simulation. The first step in such a process simulation program has been completed. This general two-dimensional aerial image program is the subject of this report.

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BibTeX citation:

@techreport{Flanner III:M86/57,
    Author= {Flanner III, P.D.},
    Title= {Two-Dimensional Optical Imaging for Photolithography Simulation},
    Year= {1986},
    Month= {Jul},
    Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1986/718.html},
    Number= {UCB/ERL M86/57},
    Abstract= {As optical lithography processing is pushed into the sub-micron
region, the ability to construct a mask that produces the required
image in photoresist becomes a limiting factor.  As dimensions
approach or go below the classical resolution limit, the interference
of diffracted light between adjacent features is a factor that
must be taken into account when designing layout rules. Computer
simulation can be a valuable tool in the study of the imaging of
small features and their proximity effects.

The SAMPLE process simulation program can simulate the aerial image
and processing of one-dimensional features, basically straight
parallel lines. However, most cases of feature proximity, such
as contacts near contacts or lines, lines near pads, defects,
and lines that bend are inherently two-dimensional and require a
two-dimensional process simulation. The first step in such a process
simulation program has been completed. This general two-dimensional
aerial image program is the subject of this report.},
}

EndNote citation:

%0 Report
%A Flanner III, P.D. 
%T Two-Dimensional Optical Imaging for Photolithography Simulation
%I EECS Department, University of California, Berkeley
%D 1986
%@ UCB/ERL M86/57
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1986/718.html
%F Flanner III:M86/57