CODECS: A Mixed-Level Circuit and Device Simulator
Kartikeya Mayaram
EECS Department, University of California, Berkeley
Technical Report No. UCB/ERL M88/71
, 1988
http://www2.eecs.berkeley.edu/Pubs/TechRpts/1988/ERL-88-71.pdf
CODECS is a mixed-level circuit and device simulator that provides a direct link between technology parameters and circuit performance. Detailed and accurate analyses of semiconductor circuits are possible by use of physical (numerical) models for critical devices. The numerical models are based upon solution of Poisson's equation and the current-continuity equations. Analytical models can be used for the noncritical devices.
The goal of this research has been to develop a general framework for mixed-level circuit and device simulation that supports a wide variety of analyses capabilities and numerical models. Emphasis has been on algorithms to couple the device simulator with the circuit simulator and an evaluation of the convergence properties of the coupled simulator. Different algorithms have been implemented and evaluated in CODECS.
Another aspect of this research has been to investigate critical applications of mixed-level circuit and device simulation. Typical examples include simulation of high-level injection effects in BiCMOS driver circuits, non-quasi-static MOS operation, switch-induced error in MOS switched-capacitor circuits, and inductive turn off of pin rectifiers. For these examples conventional circuit simulation with analytical models gives inaccurate results.
CODECS incorporates SPICE3 for the circuit-simulation capability and for analytical models. A new one- and two-dimensional device simulator has been developed. CODECS supports dc, transient, small-signal ac, and pole-zero analyses of circuits containing one- and two-dimensional numerical models for diodes and bipolar transistors and two-dimensional numerical models for MOSFETs. CODECS include physical effects such as bandgap narrowing, Shockley-Hall-Read and Auger recombinations, concentration and field-dependent dependent mobilities, concentration-dependent lifetimes, and avalanche generation.
Advisors: Donald O. Pederson
BibTeX citation:
@phdthesis{Mayaram:M88/71, Author= {Mayaram, Kartikeya}, Title= {CODECS: A Mixed-Level Circuit and Device Simulator}, School= {EECS Department, University of California, Berkeley}, Year= {1988}, Month= {Nov}, Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1988/1118.html}, Number= {UCB/ERL M88/71}, Abstract= {CODECS is a mixed-level circuit and device simulator that provides a direct link between technology parameters and circuit performance. Detailed and accurate analyses of semiconductor circuits are possible by use of physical (numerical) models for critical devices. The numerical models are based upon solution of Poisson's equation and the current-continuity equations. Analytical models can be used for the noncritical devices. The goal of this research has been to develop a general framework for mixed-level circuit and device simulation that supports a wide variety of analyses capabilities and numerical models. Emphasis has been on algorithms to couple the device simulator with the circuit simulator and an evaluation of the convergence properties of the coupled simulator. Different algorithms have been implemented and evaluated in CODECS. Another aspect of this research has been to investigate critical applications of mixed-level circuit and device simulation. Typical examples include simulation of high-level injection effects in BiCMOS driver circuits, non-quasi-static MOS operation, switch-induced error in MOS switched-capacitor circuits, and inductive turn off of pin rectifiers. For these examples conventional circuit simulation with analytical models gives inaccurate results. CODECS incorporates SPICE3 for the circuit-simulation capability and for analytical models. A new one- and two-dimensional device simulator has been developed. CODECS supports dc, transient, small-signal ac, and pole-zero analyses of circuits containing one- and two-dimensional numerical models for diodes and bipolar transistors and two-dimensional numerical models for MOSFETs. CODECS include physical effects such as bandgap narrowing, Shockley-Hall-Read and Auger recombinations, concentration and field-dependent dependent mobilities, concentration-dependent lifetimes, and avalanche generation.}, }
EndNote citation:
%0 Thesis %A Mayaram, Kartikeya %T CODECS: A Mixed-Level Circuit and Device Simulator %I EECS Department, University of California, Berkeley %D 1988 %@ UCB/ERL M88/71 %U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1988/1118.html %F Mayaram:M88/71