Oxidation of Silicon in an ECR Oxygen Plasma: Kinetics, Physico-Chemical and Electrical Properties
D.A. Carl and D.W. Hess and Michael A. Lieberman
EECS Department, University of California, Berkeley
Technical Report No. UCB/ERL M89/98
, 1989
http://www2.eecs.berkeley.edu/Pubs/TechRpts/1989/ERL-89-98.pdf
BibTeX citation:
@techreport{Carl:M89/98, Author= {Carl, D.A. and Hess, D.W. and Lieberman, Michael A.}, Title= {Oxidation of Silicon in an ECR Oxygen Plasma: Kinetics, Physico-Chemical and Electrical Properties}, Year= {1989}, Month= {Aug}, Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1989/1305.html}, Number= {UCB/ERL M89/98}, }
EndNote citation:
%0 Report %A Carl, D.A. %A Hess, D.W. %A Lieberman, Michael A. %T Oxidation of Silicon in an ECR Oxygen Plasma: Kinetics, Physico-Chemical and Electrical Properties %I EECS Department, University of California, Berkeley %D 1989 %@ UCB/ERL M89/98 %U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1989/1305.html %F Carl:M89/98