Oxidation of Silicon in an ECR Oxygen Plasma: Kinetics, Physico-Chemical and Electrical Properties

D.A. Carl, D.W. Hess and Michael A. Lieberman

EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M89/98
August 1989

http://www2.eecs.berkeley.edu/Pubs/TechRpts/1989/ERL-89-98.pdf


BibTeX citation:

@techreport{Carl:M89/98,
    Author = {Carl, D.A. and Hess, D.W. and Lieberman, Michael A.},
    Title = {Oxidation of Silicon in an ECR Oxygen Plasma: Kinetics, Physico-Chemical and Electrical Properties},
    Institution = {EECS Department, University of California, Berkeley},
    Year = {1989},
    Month = {Aug},
    URL = {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1989/1305.html},
    Number = {UCB/ERL M89/98}
}

EndNote citation:

%0 Report
%A Carl, D.A.
%A Hess, D.W.
%A Lieberman, Michael A.
%T Oxidation of Silicon in an ECR Oxygen Plasma: Kinetics, Physico-Chemical and Electrical Properties
%I EECS Department, University of California, Berkeley
%D 1989
%@ UCB/ERL M89/98
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1989/1305.html
%F Carl:M89/98