A Simple MOSFET Model for Circuit Analysis and Its Application to CMOS Gate Delay Analysis and Series-Connected MOSFET Structure

T. Sakurai and A. Richard Newton

EECS Department, University of California, Berkeley

Technical Report No. UCB/ERL M90/19

1990

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http://www2.eecs.berkeley.edu/Pubs/TechRpts/1990/Archive/ERL-90-19.pdf

A simple, general and realistic MOSFET model is introduced. The model can express the current characteristics of short-channel MOSFETs at least down to .25 micro meter channel length, GaAs FET, and resistance inserted MOSFETs. The model evaluation time is about 1/3 of the evaluation time of the SPICE3 MOS LEVEL3 model. The model parameter extraction is done by solving single variable equations and thus can be done within a second, being different from the fitting procedure with expensive numerical iterations employed for the conventional models. The model also enables analytical treatments of circuits in short-channel region and makes up for a missing link between a complicated MOSFET current characteristics and circuit behaviors in the deep submicron region.

BibTeX citation:

@techreport{Sakurai:M90/19,
    Author= {Sakurai, T. and Newton, A. Richard},
    Title= {A Simple MOSFET Model for Circuit Analysis and Its Application to CMOS Gate Delay Analysis and Series-Connected MOSFET Structure},
    Year= {1990},
    Month= {Mar},
    Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1990/1429.html},
    Number= {UCB/ERL M90/19},
    Abstract= {A simple, general and realistic MOSFET model is introduced. The model can express the current characteristics of short-channel MOSFETs at least down to .25 micro meter channel length, GaAs FET, and resistance inserted MOSFETs.  The model evaluation time is about 1/3 of the evaluation time of the SPICE3 MOS LEVEL3 model.  The model parameter extraction is done by solving single variable equations and thus can be done within a second, being different from the fitting procedure with expensive numerical iterations employed for the conventional models. The model also enables analytical treatments of circuits in short-channel region and makes up for a missing link between a complicated MOSFET current characteristics and circuit behaviors in the deep submicron region.},
}

EndNote citation:

%0 Report
%A Sakurai, T. 
%A Newton, A. Richard 
%T A Simple MOSFET Model for Circuit Analysis and Its Application to CMOS Gate Delay Analysis and Series-Connected MOSFET Structure
%I EECS Department, University of California, Berkeley
%D 1990
%@ UCB/ERL M90/19
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1990/1429.html
%F Sakurai:M90/19