Mechanisms of Silicon Etching in Fluorine- and Chlorine-Containing Plasmas

D.L. Flamm

EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M90/41
May 1990

http://www2.eecs.berkeley.edu/Pubs/TechRpts/1990/ERL-90-41.pdf

Silicon can be etched in fluorine- and chlorine- containing plasmas in many ways. This article discusses some of the basic chemical and physical phenomena which play a role and more complicated interactions and side effects found in commercial process equipment.

BibTeX citation:

@techreport{Flamm:M90/41,
    Author = {Flamm, D.L.},
    Title = {Mechanisms of Silicon Etching in Fluorine- and Chlorine-Containing Plasmas},
    Institution = {EECS Department, University of California, Berkeley},
    Year = {1990},
    Month = {May},
    URL = {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1990/1487.html},
    Number = {UCB/ERL M90/41},
    Abstract = {Silicon can be etched in fluorine- and chlorine- containing plasmas in many ways. This article discusses some of the basic chemical and physical phenomena which play a role and more complicated interactions and side effects found in commercial process equipment.}
}

EndNote citation:

%0 Report
%A Flamm, D.L.
%T Mechanisms of Silicon Etching in Fluorine- and Chlorine-Containing Plasmas
%I EECS Department, University of California, Berkeley
%D 1990
%@ UCB/ERL M90/41
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1990/1487.html
%F Flamm:M90/41