Mechanisms of Silicon Etching in Fluorine- and Chlorine-Containing Plasmas

D.L. Flamm

EECS Department, University of California, Berkeley

Technical Report No. UCB/ERL M90/41

1990

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http://www2.eecs.berkeley.edu/Pubs/TechRpts/1990/Archive/ERL-90-41.pdf

Silicon can be etched in fluorine- and chlorine- containing plasmas in many ways. This article discusses some of the basic chemical and physical phenomena which play a role and more complicated interactions and side effects found in commercial process equipment.

BibTeX citation:

@techreport{Flamm:M90/41,
    Author= {Flamm, D.L.},
    Title= {Mechanisms of Silicon Etching in Fluorine- and Chlorine-Containing Plasmas},
    Year= {1990},
    Month= {May},
    Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1990/1487.html},
    Number= {UCB/ERL M90/41},
    Abstract= {Silicon can be etched in fluorine- and chlorine- containing plasmas in many ways. This article discusses some of the basic chemical and physical phenomena which play a role and more complicated interactions and side effects found in commercial process equipment.},
}

EndNote citation:

%0 Report
%A Flamm, D.L. 
%T Mechanisms of Silicon Etching in Fluorine- and Chlorine-Containing Plasmas
%I EECS Department, University of California, Berkeley
%D 1990
%@ UCB/ERL M90/41
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1990/1487.html
%F Flamm:M90/41