D.A. Gates

EECS Department, University of California, Berkeley

Technical Report No. UCB/ERL M90/96

, 1990

http://www2.eecs.berkeley.edu/Pubs/TechRpts/1990/ERL-90-96.pdf

Inversion-layer mobility in MOS transistor channels has been investigated in order to improve its modelling in the CODECS mixed-level circuit and device simulator. Several scattering mechanisms that affect this mobility are reviewed. The inversion-layer mobility can be modelled by its dependencies on the normal and lateral components of the electric field in the channel. Based on this approach, an inversion-layer-specific mobility model has been added to CODECS. A new empirical relation is used to describe the normal-field dependence of the mobility. The new expression has been tested by comparison to experimental data. The accuracy of simulation of MOSFET I(DS)-V(GS) characteristics in the linear region is improved by the new model.

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BibTeX citation:

@techreport{Gates:M90/96,
    Author= {Gates, D.A.},
    Title= {An Inversion-Layer Mobility Model for CODECS},
    Year= {1990},
    Month= {Oct},
    Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1990/1611.html},
    Number= {UCB/ERL M90/96},
    Abstract= {Inversion-layer mobility in MOS transistor channels has been
investigated in order to improve its modelling in the CODECS
mixed-level circuit and device simulator. Several scattering
mechanisms that affect this mobility are reviewed. The
inversion-layer mobility can be modelled by its dependencies
on the normal and lateral components of the electric field in
the channel. Based on this approach, an inversion-layer-specific
mobility model has been added to CODECS. A new empirical relation is
used to describe the normal-field dependence of the mobility. The new
expression has been tested by comparison to experimental data. The
accuracy of simulation of MOSFET I(DS)-V(GS) characteristics in the
linear region is improved by the new model.},
}

EndNote citation:

%0 Report
%A Gates, D.A. 
%T An Inversion-Layer Mobility Model for CODECS
%I EECS Department, University of California, Berkeley
%D 1990
%@ UCB/ERL M90/96
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1990/1611.html
%F Gates:M90/96