Effects of DC Bias on the Kinetics and Electrical Properties of Silicon Dioxide Grown in an Electron Cyclotron Resonance Plasma
D.A. Carl and D.W. Hess and Michael A. Lieberman and T.D. Nguyen and R. Gronsky
EECS Department, University of California, Berkeley
Technical Report No. UCB/ERL M91/5
, 1991
http://www2.eecs.berkeley.edu/Pubs/TechRpts/1991/ERL-91-5.pdf
BibTeX citation:
@techreport{Carl:M91/5, Author= {Carl, D.A. and Hess, D.W. and Lieberman, Michael A. and Nguyen, T.D. and Gronsky, R.}, Title= {Effects of DC Bias on the Kinetics and Electrical Properties of Silicon Dioxide Grown in an Electron Cyclotron Resonance Plasma}, Year= {1991}, Month= {Jan}, Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1991/1679.html}, Number= {UCB/ERL M91/5}, }
EndNote citation:
%0 Report %A Carl, D.A. %A Hess, D.W. %A Lieberman, Michael A. %A Nguyen, T.D. %A Gronsky, R. %T Effects of DC Bias on the Kinetics and Electrical Properties of Silicon Dioxide Grown in an Electron Cyclotron Resonance Plasma %I EECS Department, University of California, Berkeley %D 1991 %@ UCB/ERL M91/5 %U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1991/1679.html %F Carl:M91/5