Michael A. Lieberman and R.A. Gottscho

EECS Department, University of California, Berkeley

Technical Report No. UCB/ERL M93/3

, 1993

http://www2.eecs.berkeley.edu/Pubs/TechRpts/1993/ERL-93-3.pdf

In this review article, we focus on recent advances in plasma source technology for materials processing applications. The motivation behind new source development is discussed along with the limitations of conventional radio frequency diode systems. Then the fundamental principles underlying electron heating in electron cyclotron resonance, helicon wave, inductively coupled, helical resonator, and surface wave plasmas are discussed with some attention to design issues. The transport of ions to device wafers and its influence on etching anisotrophy is discussed for all sources. Similarly, we examine the benefits of using high density sources for minimizing plasma process induced damage and discuss in particular, the effects of plasma uniformity on charging damage.

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BibTeX citation:

@techreport{Lieberman:M93/3,
    Author= {Lieberman, Michael A. and Gottscho, R.A.},
    Title= {Design of High Density Plasma Sources for Materials Processing},
    Year= {1993},
    Month= {Jan},
    Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1993/2263.html},
    Number= {UCB/ERL M93/3},
    Abstract= {In this review article, we focus on recent advances in plasma source technology for materials processing applications. The motivation behind new source development is discussed along with the limitations of conventional radio frequency diode systems. Then the fundamental principles underlying electron heating in electron cyclotron resonance, helicon wave, inductively coupled, helical resonator, and surface wave plasmas are discussed with some attention to design issues. The transport of ions to device wafers and its influence on etching anisotrophy is discussed for all sources. Similarly, we examine the benefits of using high density sources for minimizing plasma process induced damage and discuss in particular, the effects of plasma uniformity on charging damage.},
}

EndNote citation:

%0 Report
%A Lieberman, Michael A. 
%A Gottscho, R.A. 
%T Design of High Density Plasma Sources for Materials Processing
%I EECS Department, University of California, Berkeley
%D 1993
%@ UCB/ERL M93/3
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1993/2263.html
%F Lieberman:M93/3