J.H. Huang and Z.H. Liu and M.C. Jeng and P.K. Ko and Chenming Hu

EECS Department, University of California, Berkeley

Technical Report No. UCB/ERL M93/57

, 1993

http://www2.eecs.berkeley.edu/Pubs/TechRpts/1993/ERL-93-57.pdf

We present a physical, predictive and efficient model (BSIM3) for deep-submicrometer MOSFETs with emphasis on both digital and analog applications. BSIM3 can also be suitable for statistical modeling.

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BibTeX citation:

@techreport{Huang:M93/57,
    Author= {Huang, J.H. and Liu, Z.H. and Jeng, M.C. and Ko, P.K. and Hu, Chenming},
    Title= {A Robust Physical and Predictive Model for Deep-Submicrometer MOS Circuit Simulation},
    Year= {1993},
    Month= {Jul},
    Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1993/2399.html},
    Number= {UCB/ERL M93/57},
    Abstract= {We present a physical, predictive and efficient model (BSIM3) for deep-submicrometer MOSFETs with emphasis on both digital and analog applications.  BSIM3 can also be suitable for statistical modeling.},
}

EndNote citation:

%0 Report
%A Huang, J.H. 
%A Liu, Z.H. 
%A Jeng, M.C. 
%A Ko, P.K. 
%A Hu, Chenming 
%T A Robust Physical and Predictive Model for Deep-Submicrometer MOS Circuit Simulation
%I EECS Department, University of California, Berkeley
%D 1993
%@ UCB/ERL M93/57
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1993/2399.html
%F Huang:M93/57