A Robust Physical and Predictive Model for Deep-Submicrometer MOS Circuit Simulation
J.H. Huang and Z.H. Liu and M.C. Jeng and P.K. Ko and Chenming Hu
EECS Department, University of California, Berkeley
Technical Report No. UCB/ERL M93/57
, 1993
http://www2.eecs.berkeley.edu/Pubs/TechRpts/1993/ERL-93-57.pdf
We present a physical, predictive and efficient model (BSIM3) for deep-submicrometer MOSFETs with emphasis on both digital and analog applications. BSIM3 can also be suitable for statistical modeling.
BibTeX citation:
@techreport{Huang:M93/57, Author= {Huang, J.H. and Liu, Z.H. and Jeng, M.C. and Ko, P.K. and Hu, Chenming}, Title= {A Robust Physical and Predictive Model for Deep-Submicrometer MOS Circuit Simulation}, Year= {1993}, Month= {Jul}, Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1993/2399.html}, Number= {UCB/ERL M93/57}, Abstract= {We present a physical, predictive and efficient model (BSIM3) for deep-submicrometer MOSFETs with emphasis on both digital and analog applications. BSIM3 can also be suitable for statistical modeling.}, }
EndNote citation:
%0 Report %A Huang, J.H. %A Liu, Z.H. %A Jeng, M.C. %A Ko, P.K. %A Hu, Chenming %T A Robust Physical and Predictive Model for Deep-Submicrometer MOS Circuit Simulation %I EECS Department, University of California, Berkeley %D 1993 %@ UCB/ERL M93/57 %U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1993/2399.html %F Huang:M93/57