C.H. Fields

EECS Department, University of California, Berkeley

Technical Report No. UCB/ERL M93/85

, 1993

http://www2.eecs.berkeley.edu/Pubs/TechRpts/1993/ERL-93-85.pdf

A new method of testing high numerical aperture microlithographic lenses has recently been demonstrated. This method involves directly measuring the aerial image produced by the lens rather than using developed resist profiles or latent images produced in resist. Direct measurement of the aerial image eliminates any process variations associated with the resist processing and also removes the subjective nature of evaluating resist profiles. We explore the use of amorphous silicon as an alternative to chrome for Deep UV photolithography masks. The primary advantage is that patterns may be dry etched. As masks feature sizes continue to shrink, this dry etch capability of Amorphous silicon can be a significant factor. Amorphous silicon has a further advantage of high absorbtivity over the 190-350nm region.

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BibTeX citation:

@techreport{Fields:M93/85,
    Author= {Fields, C.H.},
    Title= {Direct Aerial Image Measurement at 248mm},
    Year= {1993},
    Month= {Nov},
    Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1993/2459.html},
    Number= {UCB/ERL M93/85},
    Abstract= {A new method of testing high numerical aperture microlithographic lenses has recently been demonstrated.  This method involves directly measuring the aerial image produced by the lens rather than using developed resist profiles or latent images produced in resist.  Direct measurement of the aerial image eliminates any process variations associated with the resist processing and also removes the subjective nature of evaluating resist profiles. We explore the use of amorphous silicon as an alternative to chrome for Deep UV photolithography masks.  The primary advantage is that patterns may be dry etched.  As masks feature sizes continue to shrink, this dry etch capability of Amorphous silicon can be a significant factor.  Amorphous silicon has a further advantage of high absorbtivity over the 190-350nm region.},
}

EndNote citation:

%0 Report
%A Fields, C.H. 
%T Direct Aerial Image Measurement at 248mm
%I EECS Department, University of California, Berkeley
%D 1993
%@ UCB/ERL M93/85
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1993/2459.html
%F Fields:M93/85