Oxide Charging Damage in Integrated Circuit Processing Investigated with a Coupled Plasma/IC Device Model
William G. En
EECS Department, University of California, Berkeley
Technical Report No. UCB/ERL M96/35
1996
http://www2.eecs.berkeley.edu/Pubs/TechRpts/1996/ERL-96-35.pdf
Advisors: Nathan W. Cheung
BibTeX citation:
@phdthesis{En:M96/35,
Author= {En, William G.},
Title= {Oxide Charging Damage in Integrated Circuit Processing Investigated with a Coupled Plasma/IC Device Model},
School= {EECS Department, University of California, Berkeley},
Year= {1996},
Month= {May},
Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1996/3034.html},
Number= {UCB/ERL M96/35},
}
EndNote citation:
%0 Thesis %A En, William G. %T Oxide Charging Damage in Integrated Circuit Processing Investigated with a Coupled Plasma/IC Device Model %I EECS Department, University of California, Berkeley %D 1996 %@ UCB/ERL M96/35 %U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1996/3034.html %F En:M96/35