Ultra-Shallow Junction Fabrication Using Plasma Immersion Ion Implantation and Epitaxial Cobalt Disilicide as a Dopant Source
Erin C. Jones
EECS Department, University of California, Berkeley
Technical Report No. UCB/ERL M96/36
, 1996
http://www2.eecs.berkeley.edu/Pubs/TechRpts/1996/ERL-96-36.pdf
Advisors: Nathan W. Cheung
BibTeX citation:
@phdthesis{Jones:M96/36, Author= {Jones, Erin C.}, Title= {Ultra-Shallow Junction Fabrication Using Plasma Immersion Ion Implantation and Epitaxial Cobalt Disilicide as a Dopant Source}, School= {EECS Department, University of California, Berkeley}, Year= {1996}, Month= {May}, Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1996/3035.html}, Number= {UCB/ERL M96/36}, }
EndNote citation:
%0 Thesis %A Jones, Erin C. %T Ultra-Shallow Junction Fabrication Using Plasma Immersion Ion Implantation and Epitaxial Cobalt Disilicide as a Dopant Source %I EECS Department, University of California, Berkeley %D 1996 %@ UCB/ERL M96/36 %U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1996/3035.html %F Jones:M96/36