Modeling of Cl_2-He Polysilicon Etching with a Global Model for High Pressure Electronegative Radio-Frequency Discharges

Y.T. Lee

EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M96/63
October 1996

http://www2.eecs.berkeley.edu/Pubs/TechRpts/1996/ERL-96-63.pdf


BibTeX citation:

@techreport{Lee:M96/63,
    Author = {Lee, Y.T.},
    Title = {Modeling of Cl_2-He Polysilicon Etching with a Global Model for High Pressure Electronegative Radio-Frequency Discharges},
    Institution = {EECS Department, University of California, Berkeley},
    Year = {1996},
    Month = {Oct},
    URL = {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1996/3100.html},
    Number = {UCB/ERL M96/63}
}

EndNote citation:

%0 Report
%A Lee, Y.T.
%T Modeling of Cl_2-He Polysilicon Etching with a Global Model for High Pressure Electronegative Radio-Frequency Discharges
%I EECS Department, University of California, Berkeley
%D 1996
%@ UCB/ERL M96/63
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1996/3100.html
%F Lee:M96/63