Modeling of Cl_2-He Polysilicon Etching with a Global Model for High Pressure Electronegative Radio-Frequency Discharges
Y.T. Lee
EECS Department, University of California, Berkeley
Technical Report No. UCB/ERL M96/63
, 1996
http://www2.eecs.berkeley.edu/Pubs/TechRpts/1996/ERL-96-63.pdf
BibTeX citation:
@techreport{Lee:M96/63, Author= {Lee, Y.T.}, Title= {Modeling of Cl_2-He Polysilicon Etching with a Global Model for High Pressure Electronegative Radio-Frequency Discharges}, Year= {1996}, Month= {Oct}, Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1996/3100.html}, Number= {UCB/ERL M96/63}, }
EndNote citation:
%0 Report %A Lee, Y.T. %T Modeling of Cl_2-He Polysilicon Etching with a Global Model for High Pressure Electronegative Radio-Frequency Discharges %I EECS Department, University of California, Berkeley %D 1996 %@ UCB/ERL M96/63 %U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1996/3100.html %F Lee:M96/63