An Accurate MOSFET Intrinsic Capacitance Model Considering Quantum Mechanic Effect for BSIM 3v3.2

W. Liu, X. Jin, Y-C. King and Chenming Hu

EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M98/47
July 1998

http://www2.eecs.berkeley.edu/Pubs/TechRpts/1998/ERL-98-47.pdf

BibTeX citation:

@techreport{Liu:M98/47,
    Author = {Liu, W. and Jin, X. and King, Y-C. and Hu, Chenming},
    Title = {An Accurate MOSFET Intrinsic Capacitance Model Considering Quantum Mechanic Effect for BSIM 3v3.2},
    Institution = {EECS Department, University of California, Berkeley},
    Year = {1998},
    Month = {Jul},
    URL = {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1998/3477.html},
    Number = {UCB/ERL M98/47}
}

EndNote citation:

%0 Report
%A Liu, W.
%A Jin, X.
%A King, Y-C.
%A Hu, Chenming
%T An Accurate MOSFET Intrinsic Capacitance Model Considering Quantum Mechanic Effect for BSIM 3v3.2
%I EECS Department, University of California, Berkeley
%D 1998
%@ UCB/ERL M98/47
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1998/3477.html
%F Liu:M98/47