An Accurate MOSFET Intrinsic Capacitance Model Considering Quantum Mechanic Effect for BSIM 3v3.2
W. Liu and X. Jin and Y-C. King and Chenming Hu
EECS Department, University of California, Berkeley
Technical Report No. UCB/ERL M98/47
, 1998
http://www2.eecs.berkeley.edu/Pubs/TechRpts/1998/ERL-98-47.pdf
BibTeX citation:
@techreport{Liu:M98/47, Author= {Liu, W. and Jin, X. and King, Y-C. and Hu, Chenming}, Title= {An Accurate MOSFET Intrinsic Capacitance Model Considering Quantum Mechanic Effect for BSIM 3v3.2}, Year= {1998}, Month= {Jul}, Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1998/3477.html}, Number= {UCB/ERL M98/47}, }
EndNote citation:
%0 Report %A Liu, W. %A Jin, X. %A King, Y-C. %A Hu, Chenming %T An Accurate MOSFET Intrinsic Capacitance Model Considering Quantum Mechanic Effect for BSIM 3v3.2 %I EECS Department, University of California, Berkeley %D 1998 %@ UCB/ERL M98/47 %U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1998/3477.html %F Liu:M98/47