W. Liu and X. Jin and J. Chen and M-C. Jeng and Z. Liu and Y. Cheng and K. Chen and M. Chan and K. Hui and J. Huang and R. Tu and P.K. Ko and Chenming Hu

EECS Department, University of California, Berkeley

Technical Report No. UCB/ERL M99/18

, 1999

http://www2.eecs.berkeley.edu/Pubs/TechRpts/1999/ERL-99-18.pdf

BSIM3v3 is the latest industry-standard MOSFET model for deep-submicron digital and analog circuit designs from the BSIM Group at the University of California at Berkeley. BSIM3v3.2.2 is based on its predecessor, BSIM3v3.2, with the following changes:

* A bias-independent Vfb is used in the capacitance models, capMod=l and 2 to eliminate small negative capacitance of C(gs) and C(gd) in the accumulation-depletion regions.

* A version number checking is added; a warning message will be given if user-specified version number is different from its default value of 3.2.2.

* Known bugs are fixed.

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BibTeX citation:

@techreport{Liu:M99/18,
    Author= {Liu, W. and Jin, X. and Chen, J. and Jeng, M-C. and Liu, Z. and Cheng, Y. and Chen, K. and Chan, M. and Hui, K. and Huang, J. and Tu, R. and Ko, P.K. and Hu, Chenming},
    Title= {BSIM3v3.2.2 MOSFET Model Users' Manual},
    Year= {1999},
    Month= {Mar},
    Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1999/3616.html},
    Number= {UCB/ERL M99/18},
    Abstract= {BSIM3v3 is the latest industry-standard MOSFET model for
deep-submicron digital and analog circuit designs from the BSIM
Group at the University of California at Berkeley. BSIM3v3.2.2 is
based on its predecessor, BSIM3v3.2, with the following changes:

*   A bias-independent Vfb is used in the capacitance models,
    capMod=l and 2 to eliminate small negative capacitance of
    C(gs) and C(gd) in the accumulation-depletion regions.

*   A version number checking is added; a warning message will
    be given if user-specified version number is different from
    its default value of 3.2.2.

*   Known bugs are fixed.},
}

EndNote citation:

%0 Report
%A Liu, W. 
%A Jin, X. 
%A Chen, J. 
%A Jeng, M-C. 
%A Liu, Z. 
%A Cheng, Y. 
%A Chen, K. 
%A Chan, M. 
%A Hui, K. 
%A Huang, J. 
%A Tu, R. 
%A Ko, P.K. 
%A Hu, Chenming 
%T BSIM3v3.2.2 MOSFET Model Users' Manual
%I EECS Department, University of California, Berkeley
%D 1999
%@ UCB/ERL M99/18
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1999/3616.html
%F Liu:M99/18