Effect of Ion Energy on Photoresist Etching in an Inductively Coupled Large Area Plasma Source (LAPS)
K. Takechi and Michael A. Lieberman
EECS Department, University of California, Berkeley
Technical Report No. UCB/ERL M00/58
2000
This publication is archived. It is kept only for reference purposes, so it is no longer being updated and may not meet accessibility standards. If you need this content in a different format, please email webteam@eecs.berkeley.edu.
http://www2.eecs.berkeley.edu/Pubs/TechRpts/2000/Archive/ERL-00-58.pdf
BibTeX citation:
@techreport{Takechi:M00/58,
Author= {Takechi, K. and Lieberman, Michael A.},
Title= {Effect of Ion Energy on Photoresist Etching in an Inductively Coupled Large Area Plasma Source (LAPS)},
Year= {2000},
Month= {Nov},
Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/2000/3916.html},
Number= {UCB/ERL M00/58},
}
EndNote citation:
%0 Report %A Takechi, K. %A Lieberman, Michael A. %T Effect of Ion Energy on Photoresist Etching in an Inductively Coupled Large Area Plasma Source (LAPS) %I EECS Department, University of California, Berkeley %D 2000 %@ UCB/ERL M00/58 %U http://www2.eecs.berkeley.edu/Pubs/TechRpts/2000/3916.html %F Takechi:M00/58