Forrest G. Sedgwick
EECS Department
University of California, Berkeley
Technical Report No. UCB/EECS-2008-15
February 14, 2008
http://www2.eecs.berkeley.edu/Pubs/TechRpts/2008/EECS-2008-15.pdf
Theoretical treatments and experimental results demonstrating slow and fast light in semiconductors are presented. Three different physical mechanisms are examined: electromagnetically induced transparency, coherent population oscillations, and intraband effects, e.g. carrier heating and spectral hole burning.
Advisor: Constance Chang-Hasnain
BibTeX citation:
@phdthesis{Sedgwick:EECS-2008-15, Author = {Sedgwick, Forrest G.}, Title = {Slow and Fast Light in Semiconductors}, School = {EECS Department, University of California, Berkeley}, Year = {2008}, Month = {Feb}, URL = {http://www2.eecs.berkeley.edu/Pubs/TechRpts/2008/EECS-2008-15.html}, Number = {UCB/EECS-2008-15}, Abstract = {Theoretical treatments and experimental results demonstrating slow and fast light in semiconductors are presented. Three different physical mechanisms are examined: electromagnetically induced transparency, coherent population oscillations, and intraband effects, e.g. carrier heating and spectral hole burning.} }
EndNote citation:
%0 Thesis %A Sedgwick, Forrest G. %T Slow and Fast Light in Semiconductors %I EECS Department, University of California, Berkeley %D 2008 %8 February 14 %@ UCB/EECS-2008-15 %U http://www2.eecs.berkeley.edu/Pubs/TechRpts/2008/EECS-2008-15.html %F Sedgwick:EECS-2008-15