Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor
Sapan Agarwal and James Teherani and Judy Hoyt and Dimitri Antoniadis and Eli Yablonovitch
EECS Department, University of California, Berkeley
Technical Report No. UCB/EECS-2013-249
December 31, 2013
http://www2.eecs.berkeley.edu/Pubs/TechRpts/2013/EECS-2013-249.pdf
The electron-hole (EH) Bilayer Tunneling Field-Effect Transistor promises to eliminate heavy-doping band-tails enabling a smaller subthreshold swing voltage. Nevertheless, the electrostatics of a thin structure must be optimized for gate efficiency. We analyze the tradeoff between gate efficiency versus on-state conductance to find the optimal device design. Once the EH Bilayer is optimized for a given on-state conductance, Si, Ge, and InAs all have similar gate efficiency, around 40-50%. Unlike Si & Ge, only the InAs case allows a manageable work function difference for EH Bilayer Transistor operation.
BibTeX citation:
@techreport{Agarwal:EECS-2013-249, Author= {Agarwal, Sapan and Teherani, James and Hoyt, Judy and Antoniadis, Dimitri and Yablonovitch, Eli}, Title= {Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor}, Year= {2013}, Month= {Dec}, Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/2013/EECS-2013-249.html}, Number= {UCB/EECS-2013-249}, Abstract= {The electron-hole (EH) Bilayer Tunneling Field-Effect Transistor promises to eliminate heavy-doping band-tails enabling a smaller subthreshold swing voltage. Nevertheless, the electrostatics of a thin structure must be optimized for gate efficiency. We analyze the tradeoff between gate efficiency versus on-state conductance to find the optimal device design. Once the EH Bilayer is optimized for a given on-state conductance, Si, Ge, and InAs all have similar gate efficiency, around 40-50%. Unlike Si & Ge, only the InAs case allows a manageable work function difference for EH Bilayer Transistor operation.}, }
EndNote citation:
%0 Report %A Agarwal, Sapan %A Teherani, James %A Hoyt, Judy %A Antoniadis, Dimitri %A Yablonovitch, Eli %T Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor %I EECS Department, University of California, Berkeley %D 2013 %8 December 31 %@ UCB/EECS-2013-249 %U http://www2.eecs.berkeley.edu/Pubs/TechRpts/2013/EECS-2013-249.html %F Agarwal:EECS-2013-249