Sapan Agarwal and James Teherani and Judy Hoyt and Dimitri Antoniadis and Eli Yablonovitch

EECS Department, University of California, Berkeley

Technical Report No. UCB/EECS-2013-249

December 31, 2013

http://www2.eecs.berkeley.edu/Pubs/TechRpts/2013/EECS-2013-249.pdf

The electron-hole (EH) Bilayer Tunneling Field-Effect Transistor promises to eliminate heavy-doping band-tails enabling a smaller subthreshold swing voltage. Nevertheless, the electrostatics of a thin structure must be optimized for gate efficiency. We analyze the tradeoff between gate efficiency versus on-state conductance to find the optimal device design. Once the EH Bilayer is optimized for a given on-state conductance, Si, Ge, and InAs all have similar gate efficiency, around 40-50%. Unlike Si & Ge, only the InAs case allows a manageable work function difference for EH Bilayer Transistor operation.

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BibTeX citation:

@techreport{Agarwal:EECS-2013-249,
    Author= {Agarwal, Sapan and Teherani, James and Hoyt, Judy and Antoniadis, Dimitri and Yablonovitch, Eli},
    Title= {Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor},
    Year= {2013},
    Month= {Dec},
    Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/2013/EECS-2013-249.html},
    Number= {UCB/EECS-2013-249},
    Abstract= {The electron-hole (EH) Bilayer Tunneling Field-Effect Transistor promises to eliminate heavy-doping band-tails enabling a smaller subthreshold swing voltage. Nevertheless, the electrostatics of a thin structure must be optimized for gate efficiency. We analyze the tradeoff between gate efficiency versus on-state conductance to find the optimal device design. Once the EH Bilayer is optimized for a given on-state conductance, Si, Ge, and InAs all have similar gate efficiency, around 40-50%. Unlike Si & Ge, only the InAs case allows a manageable work function difference for EH Bilayer Transistor operation.},
}

EndNote citation:

%0 Report
%A Agarwal, Sapan 
%A Teherani, James 
%A Hoyt, Judy 
%A Antoniadis, Dimitri 
%A Yablonovitch, Eli 
%T Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor
%I EECS Department, University of California, Berkeley
%D 2013
%8 December 31
%@ UCB/EECS-2013-249
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/2013/EECS-2013-249.html
%F Agarwal:EECS-2013-249