Micro-Electro-Mechanical Diode for Tunable Power Conversion
Benjamin Osoba
EECS Department, University of California, Berkeley
Technical Report No. UCB/EECS-2016-157
October 5, 2016
http://www2.eecs.berkeley.edu/Pubs/TechRpts/2016/EECS-2016-157.pdf
Semiconductor diodes suffer from non-idealities in performance, particularly non-zero forward voltage and reverse leakage current, which limit the energy efficiency of power conversion circuits. In this work, a micro-electro-mechanical (MEM) relay configured as a diode is investigated for power conversion application. Specifically, the utility of a MEM diode is demonstrated in a half-wave rectifier circuit. Due to high native pull-in voltage and high ON-state resistance, MEM relay technology requires further refinement to be promising for low-loss power conversion application.
Advisors: Tsu-Jae King Liu
BibTeX citation:
@mastersthesis{Osoba:EECS-2016-157, Author= {Osoba, Benjamin}, Title= {Micro-Electro-Mechanical Diode for Tunable Power Conversion}, School= {EECS Department, University of California, Berkeley}, Year= {2016}, Month= {Oct}, Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/2016/EECS-2016-157.html}, Number= {UCB/EECS-2016-157}, Abstract= {Semiconductor diodes suffer from non-idealities in performance, particularly non-zero forward voltage and reverse leakage current, which limit the energy efficiency of power conversion circuits. In this work, a micro-electro-mechanical (MEM) relay configured as a diode is investigated for power conversion application. Specifically, the utility of a MEM diode is demonstrated in a half-wave rectifier circuit. Due to high native pull-in voltage and high ON-state resistance, MEM relay technology requires further refinement to be promising for low-loss power conversion application.}, }
EndNote citation:
%0 Thesis %A Osoba, Benjamin %T Micro-Electro-Mechanical Diode for Tunable Power Conversion %I EECS Department, University of California, Berkeley %D 2016 %8 October 5 %@ UCB/EECS-2016-157 %U http://www2.eecs.berkeley.edu/Pubs/TechRpts/2016/EECS-2016-157.html %F Osoba:EECS-2016-157