Shiqian Shao

EECS Department, University of California, Berkeley

Technical Report No. UCB/EECS-2016-31

May 1, 2016

http://www2.eecs.berkeley.edu/Pubs/TechRpts/2016/EECS-2016-31.pdf

Advisors: Albert Pisano

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BibTeX citation:

@mastersthesis{Shao:EECS-2016-31,
    Author= {Shao, Shiqian},
    Title= {4H-Silicon Carbide p-n Diode for Harsh Environment Sensing Applications},
    School= {EECS Department, University of California, Berkeley},
    Year= {2016},
    Month= {May},
    Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/2016/EECS-2016-31.html},
    Number= {UCB/EECS-2016-31},
}

EndNote citation:

%0 Thesis
%A Shao, Shiqian 
%T 4H-Silicon Carbide p-n Diode for Harsh Environment Sensing Applications
%I EECS Department, University of California, Berkeley
%D 2016
%8 May 1
%@ UCB/EECS-2016-31
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/2016/EECS-2016-31.html
%F Shao:EECS-2016-31