4H-Silicon Carbide p-n Diode for Harsh Environment Sensing Applications

Shiqian Shao

EECS Department
University of California, Berkeley
Technical Report No. UCB/EECS-2016-31
May 1, 2016

http://www2.eecs.berkeley.edu/Pubs/TechRpts/2016/EECS-2016-31.pdf

Advisor: Albert Pisano


BibTeX citation:

@mastersthesis{Shao:EECS-2016-31,
    Author = {Shao, Shiqian},
    Title = {4H-Silicon Carbide p-n Diode for Harsh Environment Sensing Applications},
    School = {EECS Department, University of California, Berkeley},
    Year = {2016},
    Month = {May},
    URL = {http://www2.eecs.berkeley.edu/Pubs/TechRpts/2016/EECS-2016-31.html},
    Number = {UCB/EECS-2016-31}
}

EndNote citation:

%0 Thesis
%A Shao, Shiqian
%T 4H-Silicon Carbide p-n Diode for Harsh Environment Sensing Applications
%I EECS Department, University of California, Berkeley
%D 2016
%8 May 1
%@ UCB/EECS-2016-31
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/2016/EECS-2016-31.html
%F Shao:EECS-2016-31