9AGNR Local Back-gate Graphene Nanoribbon Short-field Transistors

Robert Lear

EECS Department
University of California, Berkeley
Technical Report No. UCB/EECS-2017-86
May 12, 2017

http://www2.eecs.berkeley.edu/Pubs/TechRpts/2017/EECS-2017-86.pdf

This report focuses on the work conducted at UC – Berkeley in E3S theme I (nanoelectronics) on bottom-up synthesis of GNRs for use in TFET devices. Industry has begun to reach the limitation of scaling conventional MOSFET transistors in high-speed technology. Hence, the need for energy efficient sub-60mV subthreshold swing devices is more pressing than ever. TFETs represent a potential solution to this problem, but they require material perfections not yet realized in mass production. Bottom-up synthesized GNRs have been shown to be atomically perfect in lab experiments and have the potential to be used in TFETs to continue scaling trends in industry. In this report, I explore the work of the Bokor and Yablonovitch groups in making short-field FETs from 9AGNRs. Such advancements further research toward TFETs by demonstrating the successful transfer of GNRs, fabrication of devices, and production of devices with good agreement with simulations. In this effort, we were able to yield ~10% of devices with the capability of gating. The best devices were able to see Ion/Ioff ~105, conductance of ~1 mS/┬Ám, and subthreshold swing of 350 mV/dec.

Advisor: Eli Yablonovitch


BibTeX citation:

@mastersthesis{Lear:EECS-2017-86,
    Author = {Lear, Robert},
    Title = {9AGNR Local Back-gate Graphene Nanoribbon Short-field Transistors},
    School = {EECS Department, University of California, Berkeley},
    Year = {2017},
    Month = {May},
    URL = {http://www2.eecs.berkeley.edu/Pubs/TechRpts/2017/EECS-2017-86.html},
    Number = {UCB/EECS-2017-86},
    Abstract = {This report focuses on the work conducted at UC – Berkeley in E3S theme I (nanoelectronics) on bottom-up synthesis of GNRs for use in TFET devices.  Industry has begun to reach the limitation of scaling conventional MOSFET transistors in high-speed technology.  Hence, the need for energy efficient sub-60mV subthreshold swing devices is more pressing than ever.  TFETs represent a potential solution to this problem, but they require material perfections not yet realized in mass production.  Bottom-up synthesized GNRs have been shown to be atomically perfect in lab experiments and have the potential to be used in TFETs to continue scaling trends in industry.  In this report, I explore the work of the Bokor and Yablonovitch groups in making short-field FETs from 9AGNRs. Such advancements further research toward TFETs by demonstrating the successful transfer of GNRs, fabrication of devices, and production of devices with good agreement with simulations.  In this effort, we were able to yield ~10% of devices with the capability of gating.  The best devices were able to see Ion/Ioff ~105, conductance of ~1 mS/µm, and subthreshold swing of 350 mV/dec.}
}

EndNote citation:

%0 Thesis
%A Lear, Robert
%T 9AGNR Local Back-gate Graphene Nanoribbon Short-field Transistors
%I EECS Department, University of California, Berkeley
%D 2017
%8 May 12
%@ UCB/EECS-2017-86
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/2017/EECS-2017-86.html
%F Lear:EECS-2017-86