Investigation of Energy Efficient Magnetic Switching in Novel Materials and Device Structures for Spintronics Application (EECS-2024-199)
Jason Cheng-Hsiang Hsu

Fundamental Tradeoff between Conductance and Subthreshold Swing Voltage for Barrier Thickness Modulation in Tunnel Field Effect Transistors (EECS-2014-6)
Sapan Agarwal and Eli Yablonovitch

Designing a Low Voltage, High Current Tunneling Transistor (EECS-2013-250)
Sapan Agarwal and Eli Yablonovitch

Pronounced Effect of pn-Junction Dimensionality on Tunnel Switch Threshold Shape (EECS-2013-248)
Sapan Agarwal and Eli Yablonovitch

Fundamental Conductance ÷ Voltage Limit in Low Voltage Tunnel Switches (EECS-2013-247)
Sapan Agarwal and Eli Yablonovitch

Band-Edge Steepness Obtained from Esaki/Backward Diode Current-Voltage Characteristics (EECS-2013-245)
Sapan Agarwal and Eli Yablonovitch

Metal-optic and Plasmonic Semiconductor-based Nanolasers (EECS-2012-62)
Amit Lakhani