Book chapters or sections

• C. H. Clifford and A. R. Neureuther, "Smoothing based model for images of isolated buried EUV multilayer defects (Invited Paper)," in Emerging Lithographic Technologies XII, F. M. Schellenberg, Ed., Proceedings of SPIE, Vol. 6921, Bellingham, WA: SPIE -- Society of Photo-Optical Instrumentation Engineers, 2008, pp. 692119-1-10.
• A. R. Neureuther, "If It Moves, Simulate It! (Keynote Paper)," in Optical Microlithography XXI, H. J. Levinson and M. V. Dusa, Eds., Proceedings of SPIE, Vol. 6924, Bellingham, WA: SPIE -- Society of Photo-Optical Instrumentation Engineers, 2008, pp. 992402-1-15.
• J. Rubinstein and A. R. Neureuther, "Post-decomposition assessment of double patterning layouts," in Optical Microlithography XXI, H. J. Levinson and M. V. Dusa, Eds., Proceedings of SPIE, Vol. 6924, Bellingham, WA: SPIE -- Society of Photo-Optical Instrumentation Engineers, 2008, pp. 69240O-1-12.
• L. T. Wang, W. J. Poppe, L. Pang, A. R. Neureuther, E. Alon, and B. Nikolic, "Hypersensitive parameter-identifying ring oscillators for lithography process monitoring," in Design for Manufacturability Through Design-Process Integration II, V. K. Singh and M. L. Rieger, Eds., Proceedings of SPIE, Vol. 6925, Bellingham, WA: SPIE -- Society of Photo-Optical Instrumentation Engineers, 2008, pp. 69250P-1-10.
• J. Xue, C. J. Spanos, and A. R. Neureuther, "Probe-pattern grating focus monitor through scatterometry calibration," in Metrology, Inspection, and Process Control for Microlithography XXII, J. A. Allgair and C. J. Raymond, Eds., Proceedings of SPIE, Vol. 6922, Bellingham, WA: SPIE -- Society of Photo-Optical Instrumentation Engineers, 2008, pp. 25-1-12.
• W. J. Poppe, P. Au, D. Jayasuriya, and A. R. Neureuther, "Database and data analysis strategy for multi-designer testchips," in Photomask Technology 2007, R. J. Naber and H. Kawahira, Eds., Proceedings of SPIE, Vol. 6730, Bellingham, WA: SPIE -- Society for Photo-Optical Instrumentation Engineers, 2007, pp. 67303T-1-12.
• M. A. Miller, A. R. Neureuther, D. P. Ceperley, J. Rubinstein, and K. Kikuchi, "Characterization and monitoring of photomask edge effects," in Photomask Technology 2007, R. J. Naber and H. Kawahira, Eds., Proceedings of SPIE, Vol. 6730, Bellingham, WA: SPIE -- Society of Photo-Optical Instrumentation Engineers, 2007, pp. 67301U-1-7.
• C. H. Clifford and A. R. Neureuther, "Fast three-dimensional simulation of buried EUV mask defect interaction with absorber features," in Photomask Technology 2007, R. J. Naber and H. Kawahira, Eds., Proceedings of SPIE, Vol. 6730, Bellingham, WA: SPIE -- Society of Photo-Optical Instrumentation Engineers, 2007, pp. 67301S-1-7.
• L. T. Wang and A. R. Neureuther, "Lateral interactions between standard cells using pattern matching," in Photomask Technology 2007, R. J. Naber and H. Kawahira, Eds., Proceedings of SPIE, Vol. 6730, Bellingham, WA: SPIE -- Society of Photo-Optical Instrumentation Engineers, 2007, pp. 673010-1-12.
• J. Rubinstein and A. R. Neureuther, "Images in photoresist for self-interferometric electrical image monitors," in Photomask Technology 2007, R. J. Naber and H. Kawahira, Eds., Proceedings of SPIE, Vol. 6730, Bellingham, WA: SPIE -- Society of Photo-Optical Instrumentation Engineers, 2007, pp. 673039-1-9.
• J. Xue, Y. Ben, C. Wang, M. Miller, C. J. Spanos, and A. R. Neureuther, "Parameter sensitive patterns for scatterometry monitoring," in Photomask Technology 2007, R. J. Naber and H. Kawahira, Eds., Proceedings of SPIE, Vol. 6730, Bellingham, WA: SPIE -- Society of Photo-Optical Instrumentation Engineers, 2007, pp. 4S-1-10.
• K. Balasubramanian, P. M. Echternach, M. R. Dickie, R. E. Muller, V. E. White, D. J. Hoppe, S. B. Shaklan, R. Belikov, N. J. Kasdin, R. J. Vanderbei, D. Ceperley, and A. R. Neureuther, "Fabrication and characteristics of free-standing shaped pupil masks for TPF-coronagraph," in Space Telescopes and Instrumentation I: Optical, Infrared, and Millimeter, J. C. Mather, H. A. MacEwen, and M. W. M. de Graauw, Eds., Proceedings of SPIE, Vol. 6265, Bellingham, WA: SPIE -- Society of Photo-Optical Instrumentation Engineers, 2006, pp. 62653N-1-9.
• D. Ceperley, A. R. Neureuther, M. Miller, M. Lieber, and J. kasdin, "Stray-light sources from pupil mask edges and mitigation techniques for the TPF coronagraph," in Modeling, Systems Engineering, and Project Management for Astronomy II, M. J. Cullum and G. Z. Angeli, Eds., Proceedings of SPIE, Vol. 6271, Bellingham, WA: SPIE -- Society of Photo-Optical Instrumentation Engineers, 2006, pp. 62711F-1-12.
• G. McIntyre, A. R. Neureuther, S. Slonaker, V. Vellanki, and P. Reynolds, "Experimental verification of PSM polarimetry: Monitoring polarization at 193nm high-NA with phase shift masks," in Optical Microlithography XIX, D. G. Flagello, Ed., Proceedings of SPIE, Vol. 6154, Bellingham, WA: SPIE -- Society of Photo-Optical Instrumentation Engineers, 2006, pp. 61540D-.
• J. Holwill, G. McIntyre, W. Poppe, and A. R. Neureuther, "Layout 'hot spots' for advancing optical technologies," in Optical Microlithography XIX, D. G. Flagello, Ed., Proceedings of SPIE, Vol. 6154, Bellingham, WA: SPIE -- Society of Photo-Optical Instrumentation Engineers, 2006, pp. 651543M-1-9.
• W. J. Poppe, L. Capodieci, and A. R. Neureuther, "Platform for collaborative DFM," in Design and Process Integration for Microelectronic Manufacturing IV, A. K. K. Wong and V. K. Singh, Eds., Proceedings of SPIE, Vol. 6156, Bellingham, WA: SPIE -- Society of Photo-Optical Instrumentation Engineers, 2006, pp. 61560E-1-10.
• W. J. Poppe, L. Capodieci, J. Wu, and A. R. Neureuther, "From poly line to transistor: Building BSIM models for non-rectangular transistors," in Design and Process Integration for Microelectronic Manufacturing IV, A. K. K. Wong and V. K. Singh, Eds., Proceedings of SPIE, Vol. 6156, Bellingham, WA: SPIE -- Society of Photo-Optical Instrumentation Engineers, 2006, pp. 61560P-1-9.
• W. Poppe, A. Liddle, E. Anderson, and A. R. Neureuther, "Pattern noise in e-beam exposed sub-35-nm contacts," in Advances in Resist Technology and Processing XXIII, Q. Ling, Ed., Proceedings of SPIE, Vol. 6153, Bellingham, WA: SPIE -- Society of Photo-Optical Instrumentation Engineers, 2006, pp. 61533Z-1-10.
• M. C. Lam and A. R. Neureuther, "Modeling methodologies and defect printability maps for buried defects in EUV mask blanks," in Emerging Lithographic Technologies X, M. J. Lercel, Ed., Proceedings of SPIE, Vol. 6151, Bellingham, WA: SPIE -- Society of Photo-Optical Instrumentation Engineers, 2006, pp. 51510D-1-12.
• J. Wang, O. Solgaard, and A. R. Neureuther, "High-sensitivity interferometric schemes for ML2 micromirror calibrations," in Emerging Lithographic Technologies X, M. J. Lercel, Ed., Proceedings of SPIE, Vol. 6151, Bellingham, WA: SPIE -- Society of Photo-Optical Instrumentation Engineers, 2006, pp. 615112-1-8.
• J. Holwill and A. R. Neureuther, "Self-interferometric electrical image monitors," in Metrology, Inspection, and Process Control for Microlithography XX, C. N., Ed., Proceedings of SPIE, Vol. 6152, Bellingham, WA: SPIE -- Society of Photo-Optical Instrumentation Engineers, 2006, pp. 615215-1-8.
• J. P. Cain, G. McIntyre, P. Naulleau, A. Pawloski, B. La Fontaine, O. Wood, C. J. Spanos, and A. R. Neureuther, "Two-wave pattern shift aberration monitor for centrally obscured optical systems," in Emerging Lithographic Technologies IX, R. S. Mackay, Ed., Proceedings of SPIE, Vol. 5751, Bellingham, WA: SPIE -- Society of Photo-Optical Instrumentation Engineers, 2005, pp. 1230-1237.
• D. T. Blackston, J. Demmel, A. R. Neureuther, and B. Wu, "Integration of an adaptive parallel N-body solver into a particle by particle electron-beam interaction simulator," in Proc. SPIE: Charged Particle Optics IV, E. Munro, Ed., Vol. 3777, Bellingham, WA: SPIE -- The International Society for Optical Engineering, 1999, pp. 228-239.

Articles in journals or magazines

• A. Shanker, L. Tian, M. Sczyrba, B. Connolly, A. R. Neureuther, and L. Waller, "Transport of intensity phase imaging in the presence of curl effects induced by strongly absorbing photomasks," Applied optics, vol. 53, no. 34, pp. J1--J6, Aug. 2014.
• N. Xu, L. Wang, A. R. Neureuther, and T. Liu, "Physically Based Modeling of Stress-Induced Variation in Nanoscale Transistor Performance," Device and Materials Reliability, IEEE Transactions on, vol. 11, no. 3, pp. 378--386, Sep. 2011.
• G. R. McIntyre and A. R. Neureuther, "Phase shift mask interferometric birefringence monitor," J. Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 24, no. 6, pp. 2808-2814, Nov. 2006.
• M. A. Miller, W. J. Poppe, A. R. Neureuther, A. Liddle, and B. Harteneck, "Pattern noise in electron beam resists: PMMA, KRS-XE, TOK, HSQ," J. Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 24, no. 6, pp. 3025-3030, Nov. 2006.
• G. R. McIntyre, J. Kye, H. Levinson, and A. R. Neureuther, "Polarization aberrations in hyper-numerial-aperture projection printing: A comparison of various representations," J. Microlithography, Microfabrication, and Microsystems, vol. 5, no. 3, pp. 033001-1-13, July 2006.
• A. R. Neureuther, R. F. W. Pease, L. Yuan, K. Baghbani Parizi, H. Esfandyarpour, W. J. Poppe, J. A. Liddle, and E. H. Anderson, "Shot noise models for sequential processes and the role of lateral mixing," J. Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 24, no. 4, pp. 1902-1908, July 2006.
• A. R. Neureuther and D. Ceperley, "Modeling and simulation for nanometrics (Invited Paper)," J. Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 23, no. 6, pp. 2578-2583, Nov. 2005.
• C. F. R. Mateus, M. C. Y. Huang, Y. Deng, A. R. Neureuther, and C. Chang-Hasnain, "Ultrabroadband mirror using low-index cladded subwavelength grating," IEEE Photonics Technology Letters, vol. 16, no. 2, pp. 518-520, Feb. 2004.
• G. Robins, K. Adam, and A. R. Neureuther, "Measuring optical image aberrations with pattern and probe based targets," J. Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 20, no. 1, pp. 338-343, Jan. 2002.
• N. Rau, F. Stratton, C. Fields, T. Ogawa, A. R. Neureuther, R. Kubena, and G. Willson, "Shot-noise and edge roughness effects in resists patterned at 10 nm exposure," J. Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 16, no. 6, pp. 3784-3788, Nov. 1998.
• J. Bokor, A. R. Neureuther, and W. G. Oldham, "Advanced lithography for ULSI," IEEE Circuits and Devices Magazine, vol. 12, no. 1, pp. 11-15, Jan. 1996.
• N. N. Tam, H. Y. Liu, N. N. Tam, H. Y. Liu, C. J. Spanos, and A. R. Neureuther, "A statistically based model of electron-beam exposed, chemically amplified negative resist," J. Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 9, no. 6, pp. 3362-3369, Nov. 1991.
• R. Guerrieri, K. H. Tadros, J. Gamelin, and A. R. Neureuther, "Massively parallel algorithms for scattering in optical lithography," IEEE Trans. Computer-Aided Design of Integrated Circuits and Systems, vol. 10, no. 9, pp. 1091-1100, Sep. 1991.
• A. R. Neureuther and C. G. Willson, "Reduction in x-ray lithography shot noise exposure limit by dissolution phenomena," J. Vacuum Science & Technology B: Microelectronics -- Processing and Phenomena, vol. 6, no. 1, pp. 167-173, Jan. 1988.
• A. R. Neureuther, P. Flanner, III, and S. Shen, "Coherence of defect interactions with features in optical imaging," J. Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 5, no. 1, pp. 308-312, Jan. 1987.
• W. G. Oldham, A. R. Neureuther, C. Sung, J. L. Reynolds, and S. N. Nandgaonkar, "A general simulator for VLSI lithography and etching processes: Part II--Application to deposition and etching," IEEE Trans. Electron Devices, vol. 27, no. 8, pp. 1455-1459, Aug. 1980.
• W. G. Oldham, S. N. Nandgaonkar, A. R. Neureuther, and M. O'Toole, "A general simulator for VLSI lithography and etching processes: Part I--Application to projection lithography," IEEE Trans. Electron Devices, vol. 26, no. 4, pp. 717-722, April 1979.
• A. R. Neureuther, R. M. White, and C. Wright, "Introduction to Electronics: Sophomore Self-Study Course," IEEE Trans. Education, vol. E-22, no. 1, pp. 17-20, Feb. 1979.
• F. H. Dill, A. R. Neureuther, J. A. Tuttle, and E. J. Walker, "Modeling projection printing of positive photoresists," IEEE Trans. Electron Devices, vol. ED-22, no. 7, pp. 456-464, July 1975.

Articles in conference proceedings

• N. Xu, X. Sun, L. Wang, A. R. Neureuther, and T. King Liu, "Predictive compact modeling for strain effects in nanoscale transistors," in 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2009), 2009.
• J. Yang and A. R. Neureuther, "Crosstalk noise variation assessment and analysis for the worst process corner," in Proc. 9th IEEE Intl. Symp. on Quality Electronic Design (ISQED 2008), Los Alamitos, CA: IEEE Computer Society, 2008, pp. 352-356.
• D. P. Ceperley and A. R. Neureuther, "Simulating novel EM effects," in Proc. 2007 IEEE Intl. Semiconductor Device Research Symp. (ISDRS '07), Piscataway, NJ: IEEE Press, 2007, pp. 2 pg.
• L. Yuan, S. Nagahara, and A. R. Neureuther, "Applying double exposed sharp tip technique (DEST) to characterize material phenomena in DUV photoresist," in Proc. SPIE: Advances in Resist Technology and Processing XXII, J. L. Sturtevant, Ed., Vol. 5753, Bellingham, WA: SPIE, 2005, pp. 1108-1118.
• M. C. Lam and A. R. Neureuther, "Fast simulation methods for defective EUV mask blank inspection," in Proc. SPIE: 24th Annual BACUS Symp. on Photomask Technology, W. Staud and J. T. Weed, Eds., Vol. 5567, Bellingham, WA: SPIE, 2004, pp. 741-750.
• G. C. Robins and A. R. Neureuther, "Characterizing the demons in high-NA phase-shifting masks (Conference Best Paper Award)," in Proc. SPIE: 24th Annual BACUS Symp. on Photomask Technology, W. Staud and J. T. Weed, Eds., Vol. 5567, Bellingham, WA: SPIE, 2004, pp. 445-455.
• K. Adam and A. R. Neureuther, "Methodology for accurate and rapid simulation of large arbitrary 2D layouts of advanced photomasks," in Proc. SPIE: 21st Annual BACUS Symp. on Photomask Technology, G. T. Dao and B. J. Grenon, Eds., Vol. 4562, Bellingham, WA: SPIE, 2002, pp. 1051-1067.
• F. E. Gennari and A. R. Neureuther, "Aberrations are a big part of OPC for phase-shifting masks," in Proc. SPIE: 21st Annual BACUS Symp. on Photomask Technology, G. T. Dao and B. J. Grenon, Eds., Vol. 4562, Bellingham, WA: SPIE, 2002, pp. 1077-1086.
• K. Adam and A. R. Neureuther, "Simplified models for edge transitions in rigorous mask modeling," in Proc. SPIE: Optical Microlithography XIV, C. J. Progler, Ed., Vol. 4346, Bellingham, WA: SPIE, 2001, pp. 331-344.
• A. R. Neureuther, R. H. Wang, J. J. Helmsen, J. F. Sefler, E. W. Scheckler, R. Gunturi, and R. Winterbottom, "3D topography simulation using surface representation and central utilities," in 3-Dimensional Process Simulation: Proc. Intl. Workshop on 3D Process Simulation, J. Lorenz, Ed., Wien, Austria: Springer-Verlag, 1995, pp. 57-76.
• K. H. Toh and A. R. Neureuther, "Identifying and monitoring effects of lens aberrations in projection printing," in Proc. SPIE: Optical Microlithography VI, H. L. Stover, Ed., Vol. 772, Bellingham, WA: SPIE, 1987, pp. 202-209.
• M. D. Prouty and A. R. Neureuther, "Optical imaging with phase shift masks," in Proc. of the SPIE: Optical Microlithography III: Technology for the Next Decade, H. L. Stover, Ed., Vol. 470, Bellingham, WA: SPIE, 1984, pp. 228-232.
• A. R. Neureuther and K. Zaki, "Numerical methods for the analysis of scattering from non-planar periodic structures," in Selected Papers from the URSI Symp. on Electromagnetic Waves, Alta Frequenza, Special Issue, Vol. 38, Maggio, 1969, pp. 282-285.

Technical Reports

• M. Miller, A. R. Neureuther, D. Ceperley, and K. Kikuchi, "Impact of photomask quadrature edge effects through focus," EECS Department, University of California, Berkeley, Tech. Rep. UCB/EECS-2008-133, Oct. 2008.
• D. Lee, D. Newmark, K. Toh, P. Flanner, and A. R. Neureuther, "SPLAT v5.0 User's Guide," EECS Department, University of California, Berkeley, Tech. Rep. UCB/ERL M95/13, March 1995.
• A. R. Neureuther, C. J. Spanos, M. Hatzilambrou, and C. Yu, "White Paper Concurrent Circuit Design/ Process Engineering in a Flexible Manufacturing Environment," EECS Department, University of California, Berkeley, Tech. Rep. UCB/ERL M93/91, Dec. 1993.
• W. G. Oldham and A. R. Neureuther, "Investigation of Process Technology Elements," EECS Department, University of California, Berkeley, Tech. Rep. UCB/ERL M91/66, June 1991.
• A. R. Neureuther, W. G. Oldham, R. Anderson, D. Drako, W. Haller, B. Huynh, D. Lyons, G. Misium, D. Sutija, K. Toh, and B. Uathavikul, "Test Structures for the Electrical Characterization of Optical Lithography," EECS Department, University of California, Berkeley, Tech. Rep. UCB/ERL M88/39, May 1988.
• A. R. Neureuther, W. G. Oldham, R. Anderson, D. Drako, W. Haller, B. Huynh, D. Lyons, G. Misium, D. Sutija, K. Toh, and B. Uathavikul, "Test Structures for the Visual Characterization of Optical Lithography," EECS Department, University of California, Berkeley, Tech. Rep. UCB/ERL M88/38, May 1988.
• W. G. Oldham, A. R. Neureuther, Y. Shacham, and F. Dupois, "Berkeley CMOS Process: A User Guide," EECS Department, University of California, Berkeley, Tech. Rep. UCB/ERL M84/84, Oct. 1984.
• W. G. Oldham, A. R. Neureuther, and Y. Shacham, "Berkeley CMOS Process Test Patterns," EECS Department, University of California, Berkeley, Tech. Rep. UCB/ERL M84/26, March 1984.
• A. Neureuther, "Simulation of X-Ray Resist Line Edge Profiles," EECS Department, University of California, Berkeley, Tech. Rep. UCB/ERL M77/43, June 1977.

Patents

• G. R. McIntyre and A. R. Neureuther, "Phase-shifting test mask patterns for characterizing illumination polarization balance in image forming optical systems," U.S. Patent 7,224,458. May 2007.
• A. R. Neureuther, K. Adam, G. C. Robins, and E. F. Gennari, "Characterizing aberrations in an imaging lens and applications to visual testing and integrated circuit mask analysis," U.S. Patent 7,030,997. April 2006.
• A. R. Neureuther and G. R. McIntyre, "Phase shifting test mask patterns for characterizing illumination and mask quality in image forming optical systems," U.S. Patent Application. Feb. 2005.
• M. Cheng and A. R. Neureuther, "Method and apparatus for enhancing resist sensitivity and resolution by application of an alternating electric field during post-exposure bake," U.S. Patent 6,686,132. Feb. 2004.
• Y. Liu, A. Zakhor, and A. Neureuther, "Method for making masks," U.S. Patent 5,326,659. July 1994.

Ph.D. Theses

• A. Shanker and A. Wojdyla, "Differential methods in phase imaging for optical lithography," L. Waller and A. R. Neureuther, Eds., EECS Department, University of California, Berkeley, Tech. Rep. UCB/EECS-2018-160, Dec. 2018.
• E. Chin, "Compensation for Lithography Induced Process Variations during Physical Design," A. R. Neureuther, Ed., EECS Department, University of California, Berkeley, Tech. Rep. UCB/EECS-2011-36, May 2011.

Masters Reports

• A. Shanker, "Defocus based phase imaging for quantifying electromagnetic edge effects in photomasks," L. Waller and A. R. Neureuther, Eds., EECS Department, University of California, Berkeley, Tech. Rep. UCB/EECS-2014-105, May 2014.
• R. Chao, "Measurement and characterization of EUV mask performance at high-NA," A. R. Neureuther, L. Waller, and P. Naulleau, Eds., EECS Department, University of California, Berkeley, Tech. Rep. UCB/EECS-2013-56, May 2013.