High-Performance Field-Effect Transistors Formed by Impurity Redistribution

D.A. Hodges

EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M58
February 1964

http://www2.eecs.berkeley.edu/Pubs/TechRpts/1964/ERL-m-58.pdf

BibTeX citation:

@techreport{Hodges:M58,
    Author = {Hodges, D.A.},
    Title = {High-Performance Field-Effect Transistors Formed by Impurity Redistribution},
    Institution = {EECS Department, University of California, Berkeley},
    Year = {1964},
    Month = {Feb},
    URL = {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1964/28847.html},
    Number = {UCB/ERL M58}
}

EndNote citation:

%0 Report
%A Hodges, D.A.
%T High-Performance Field-Effect Transistors Formed by Impurity Redistribution
%I EECS Department, University of California, Berkeley
%D 1964
%@ UCB/ERL M58
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1964/28847.html
%F Hodges:M58