0.35 µm CMOS PROCESS ON SIX-INCH WAFERS, Baseline Report VII.
Laszlo Petho
EECS Department, University of California, Berkeley
Technical Report No. UCB/EECS-2009-163
December 7, 2009
http://www2.eecs.berkeley.edu/Pubs/TechRpts/2009/EECS-2009-163.pdf
This report details the fifth six-inch baseline run, CMOS192, fabricated in the UC Berkeley Microlab. A moderately complex 0.35 µm twin-well process, developed and fine-tuned in earlier runs, was used. Different research circuits were placed in the drop-in area: ring oscillators, different memory circuits, a MEMS design, features for carbon nanotube integration and nanowire-based molecular sensors.
BibTeX citation:
@techreport{Petho:EECS-2009-163, Author= {Petho, Laszlo}, Title= {0.35 µm CMOS PROCESS ON SIX-INCH WAFERS, Baseline Report VII.}, Year= {2009}, Month= {Dec}, Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/2009/EECS-2009-163.html}, Number= {UCB/EECS-2009-163}, Abstract= {This report details the fifth six-inch baseline run, CMOS192, fabricated in the UC Berkeley Microlab. A moderately complex 0.35 µm twin-well process, developed and fine-tuned in earlier runs, was used. Different research circuits were placed in the drop-in area: ring oscillators, different memory circuits, a MEMS design, features for carbon nanotube integration and nanowire-based molecular sensors.}, }
EndNote citation:
%0 Report %A Petho, Laszlo %T 0.35 µm CMOS PROCESS ON SIX-INCH WAFERS, Baseline Report VII. %I EECS Department, University of California, Berkeley %D 2009 %8 December 7 %@ UCB/EECS-2009-163 %U http://www2.eecs.berkeley.edu/Pubs/TechRpts/2009/EECS-2009-163.html %F Petho:EECS-2009-163