Experimental and Simulation Study of Resistive Switches for Memory Applications
Feng Pan
EECS Department, University of California, Berkeley
Technical Report No. UCB/EECS-2012-192
September 4, 2012
http://www2.eecs.berkeley.edu/Pubs/TechRpts/2012/EECS-2012-192.pdf
BibTeX citation:
@techreport{Pan:EECS-2012-192, Author= {Pan, Feng}, Title= {Experimental and Simulation Study of Resistive Switches for Memory Applications}, Year= {2012}, Month= {Sep}, Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/2012/EECS-2012-192.html}, Number= {UCB/EECS-2012-192}, }
EndNote citation:
%0 Report %A Pan, Feng %T Experimental and Simulation Study of Resistive Switches for Memory Applications %I EECS Department, University of California, Berkeley %D 2012 %8 September 4 %@ UCB/EECS-2012-192 %U http://www2.eecs.berkeley.edu/Pubs/TechRpts/2012/EECS-2012-192.html %F Pan:EECS-2012-192