Experimental and Simulation Study of Resistive Switches for Memory Applications
Feng Pan
EECS Department, University of California, Berkeley
Technical Report No. UCB/EECS-2013-38
May 1, 2013
http://www2.eecs.berkeley.edu/Pubs/TechRpts/2013/EECS-2013-38.pdf
Advisors: Vivek Subramanian
BibTeX citation:
@phdthesis{Pan:EECS-2013-38,
Author= {Pan, Feng},
Title= {Experimental and Simulation Study of Resistive Switches for Memory Applications},
School= {EECS Department, University of California, Berkeley},
Year= {2013},
Month= {May},
Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/2013/EECS-2013-38.html},
Number= {UCB/EECS-2013-38},
}
EndNote citation:
%0 Thesis %A Pan, Feng %T Experimental and Simulation Study of Resistive Switches for Memory Applications %I EECS Department, University of California, Berkeley %D 2013 %8 May 1 %@ UCB/EECS-2013-38 %U http://www2.eecs.berkeley.edu/Pubs/TechRpts/2013/EECS-2013-38.html %F Pan:EECS-2013-38