Sayeef Salahuddin

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Professor

Contact Information

515 Sutardja Dai Hall

tel: 510-642-4662

Office Hours

Tues, 11:00am-12pm, 515 Sutardja Dai

Thurs, 11:00am-12:00pm, 515 Sutardja Dai

Links

Personal Homepage

Publications

Dissertations

Research Support

Derek Johnson
derekj@berkeley.edu

Biography

Sayeef Salahuddin is the TSMC Distinguished professor of Electrical Engineering and Computer Sciences at the University of California Berkeley. He is also a senior Material Scientist at the Lawrence Berkeley National Laboratory.

Salahuddin received his B.Sc. in Electrical and Electronic Engineering from BUET (Bangladesh University of Engineering and Technology) in 2003 and PhD in Electrical and Computer Engineering from Purdue University in 2007. He joined the faculty of Electrical Engineering and Computer Science at University of California, Berkeley in 2008.

His work has focused predominantly on exploring physics phenomena that show potential for improved energy efficiency in computing. He proposed the Negative Capacitance effect in ferroelectric materials and experimentally established the conditions in which negative capacitance manifests. He has also pioneered research on ultra-thin ferroelectric materials and their synthesis on arbitrary substrates. Negative capacitance in thin ferroelectric films has led to very high permittivity beyond conventional limits and has been adopted in the most advanced memory and processor technologies.

Salahuddin received the Presidential Early Career Award for Scientist and Engineers (PECASE) from President Obama. He also received the IEEE Andrew S Grove Award, a technical field award given by IEEE, for ‘For outstanding contributions to solid-state devices and technology’ and James C McGroddy Prize for New Materials by the American Physical Society.

Salahuddin received several other awards including the National Science Foundation CAREER award, the IEEE Nanotechnology Early Career Award, the Young Investigator Awards from the Airforce Office of Scientific Research and the Army Research Office, and the IEEE George E Smith Award.

Between 2022-2025, Salahuddin served as the Editor-in-Chief of the IEEE Electron Devices Letters.

Salahuddin is a Fellow of the IEEE, the APS and the AAAS.

Education

2007, Ph.D., Electrical and Computer Engineering, Purdue University

2003, B.S., Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology

Research Areas

Physical Electronics (PHY)

Power and Energy (ENE)

Scientific Computing (SCI)

Research Centers

Center for Energy Efficient Electronics Science (E3S)

Teaching Schedule

EECS 16B. Introduction to Circuits & Devices, TuTh 14:00-15:29, Valley Life Sciences 2050

Please see Google Scholar for a complete list of publications.

A. I. Khan, K. Chatterjee, B. Wang, S. Drapcho, L. You, C. Serrao, S. R. Bakaul, R. Ramesh, and S. Salahuddin, "Negative capacitance in a ferroelectric capacitor," Nature materials, vol. 14, no. 2, pp. 182--186, Jan. 2015.
D. Bhowmik, L. You, and S. Salahuddin, "Spin Hall effect clocking of nanomagnetic logic without a magnetic field," Nature Nanotechnology, 2013.
S. Salahuddin, "Solid-state physics: A new spin on spintronics," Nature, vol. 494, no. 7435, pp. 43--44, 2013.
M. R. Esmaeili-Rad and S. Salahuddin, "High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector," Scientific Reports, vol. 3, Aug. 2013.
Y. Yoon, K. Ganapathi, and S. Salahuddin, "How Good Can Monolayer MoS2 Transistors Be?," Nano Letters, vol. 11, no. 9, pp. 3768-3773, 2011.
Y. Yoon, D. E. Nikonov, and S. Salahuddin, "Role of phonon scattering in graphene nanoribbon transistors: Nonequilibrium Green's function method with real space approach," Applied Physics Letters, vol. 98, no. 20, pp. 203503, 2011.
J. T. Heron, M. Trassin, K. Ashraf, M. Gajek, Q. He, S. Y. Yang, D. E. Nikonov, Y. Chu, S. Salahuddin, and R. Ramesh, "Electric-Field-Induced Magnetization Reversal in a Ferromagnet-Multiferroic Heterostructure," Phys. Rev. Lett., vol. 107, pp. 217202, Nov. 2011.
A. I. Khan, D. Bhowmik, P. Yu, S. J. Kim, X. Pan, R. Ramesh, and S. Salahuddin, "Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures (Cover Story)," Applied Physics Letters, vol. 99, no. 11, pp. 113501, Sep. 2011.
K. Ganapathi and S. Salahuddin, "Heterojunction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High on Current," Electron Device Letters, IEEE, vol. 32, no. 5, pp. 689 -691, May 2011.
Y. Yoon and S. Salahuddin, "Barrier-free tunneling in a carbon heterojunction transistor (Cover Story)," Applied Physics Letters, vol. 97, no. 3, pp. 033102, July 2010.
B. Behin-Aein, D. Datta, S. Salahuddin, and S. Datta, "Proposal for an all-spin logic device with built-in memory," Nature Nanotechnology, vol. 5, no. 4, pp. 266--270, Feb. 2010.
S. Salahuddin and S. Datta, "Use of negative capacitance to provide voltage amplification for low power nanoscale devices (Issue Cover Story)," Nanoletters, vol. 8, no. 2, pp. 405-410, Feb. 2008.
S. Salahuddin, M. Lundstrom, and S. Datta, "Transport effects on signal propagation in quantum wires," Electron Devices, IEEE Transactions on, vol. 52, no. 8, pp. 1734--1742, 2005.

APS James C. McGroddy Prize for New Materials, 2026
IEEE Andrew S. Grove Award, 2025
American Association for the Advancement of Science (AAAS) Fellow, 2023
Institute of Electrical & Electronics Engineers (IEEE) Fellow, 2019
American Physical Society (APS) Fellow, 2019
IEEE EDS George E. Smith Award, 2019
NSF Presidential Early Career Award for Scientists & Engineers (PECASE), 2013
IEEE CASS Very Large Scale Integration Systems Best Paper Award, 2013
NSF Faculty Early Career Development Award (CAREER), 2012
IEEE NTC Early Career Award in Nanotechnology, 2012
Hellman Fellow, 2010
SRC Inventor Recognition Award, 2007

Sayeef Salahuddin: Faculty Home Page