Modeling and Design of Nanoscale Ferroelectric and Negative-Capacitance Gate Transistors (EECS-2022-32)
Yu-Hung Liao

Towards High-Endurance, Nonvolatile, CMOS-Compatible Ferroelectric Memories for Next-Generation Computing (EECS-2022-17)
Ava Tan

2-D Materials: Low Power Electronics and Novel Device Possibilities (EECS-2019-13)
Varun Mishra

Design and Characterization of Ferroelectric Negative Capacitance (EECS-2018-131)
Korok Chatterjee

Three-Dimensional Structure Formation via Inkjet-printed Metal Nanoparticles: Ink and Application Development (EECS-2018-96)
Dwipayan Patnaik

Quantum Transport and Phase-Field Modeling for Next-Generation Logic Devices (EECS-2017-128)
Samuel Smith

Exploration of surface states in a monolayer MoS2 transistor by pulsed gating (EECS-2016-188)
Zhongyuan Lu

Enhancement of the Spin Hall Effect in Heavy Metal Bilayers (EECS-2016-29)
Haron Abdel-Raziq

Piezoelectric Negative Capacitance (EECS-2015-57)
Justin Wong and Sayeef Salahuddin