Investigation of Plasma Implantation and Gate Oxide Charging During Plasma Processing
Barry P. Linder [1999]

Oxide Charging Damage in Integrated Circuit Processing Investigated with a Coupled Plasma/IC Device Model
William G. En [1996]

Ultra-Shallow Junction Fabrication Using Plasma Immersion Ion Implantation and Epitaxial Cobalt Disilicide as a Dopant Source
Erin C. Jones [1996]

Gallium Nitride Semiconductor Device Issues
James S. Chan [1995]

Fabrication Technology and Device Modeling for Gallium Arsenide Metal-Semiconductor Field-Effect Transistor
Chunlin Liang [1990]

Modeling and Testing of Electromigration Effects in Integrated Circuit Interconnects and Contacts under Time-Varying Current Conditions
Boon-Khim Liew [1990]

Gettering of Metallic Impurities with Implanted Carbon in Silicon
Hing Wong [1989]

Characterization and Fabrication of Channeling Masks for Masked Ion Beam Lithography
Gary M. Atkinson [1985]

Megavolt Dopant Implantation into Silicon
Peter F. Byrne [1984]